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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.7A, 9A, 1uA, 0.65 Ohms, TO-220FP, TO220F, 600V - MDF9N60TH

N-channel transistor, 5.7A, 9A, 1uA, 0.65 Ohms, TO-220FP, TO220F, 600V - MDF9N60TH
Quantity excl. VAT VAT incl.
1 - 4 3.60$ 3.60$
5 - 8 3.42$ 3.42$
Quantity U.P
1 - 4 3.60$ 3.60$
5 - 8 3.42$ 3.42$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 8
Set of 1

N-channel transistor, 5.7A, 9A, 1uA, 0.65 Ohms, TO-220FP, TO220F, 600V - MDF9N60TH. N-channel transistor, 5.7A, 9A, 1uA, 0.65 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 1uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 600V. C(in): 1160pF. Cost): 134pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 360ns. Type of transistor: MOSFET. Function: SMPS, high Speed switching. G-S Protection: no. Id(imp): 32A. IDss (min): 1uA. Marking on the case: MDF9N60. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. RoHS: yes. Spec info: Ultra Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 31 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer Magnachip Semiconductor. Quantity in stock updated on 08/06/2025, 08:25.

Equivalent products :

Quantity in stock : 15
MDF11N60TH

MDF11N60TH

N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 6.9A. ID (T=...
MDF11N60TH
N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 600V. C(in): 1700pF. Cost): 184pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: SMPS, high Speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. RoHS: yes. Spec info: Ultra Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
MDF11N60TH
N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 600V. C(in): 1700pF. Cost): 184pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: SMPS, high Speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. RoHS: yes. Spec info: Ultra Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
4.04$ VAT incl.
(4.04$ excl. VAT)
4.04$

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