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Semiconductors Transistors

MJE350

MJE350
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.57$ 0.57$
5 - 9 0.54$ 0.54$
10 - 24 0.51$ 0.51$
25 - 49 0.49$ 0.49$
50 - 99 0.47$ 0.47$
100 - 249 0.49$ 0.49$
250 - 587 0.63$ 0.63$
Quantity U.P
1 - 4 0.57$ 0.57$
5 - 9 0.54$ 0.54$
10 - 24 0.51$ 0.51$
25 - 49 0.49$ 0.49$
50 - 99 0.47$ 0.47$
100 - 249 0.49$ 0.49$
250 - 587 0.63$ 0.63$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 587
Set of 1

MJE350. Number of terminals: 3. Manufacturer's marking: MJE350. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Power: 20.8W. Housing: TO-126. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32). Quantity in stock updated on 24/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 148
MJE350-ONS

MJE350-ONS

C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE...
MJE350-ONS
C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
MJE350-ONS
C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.97$ VAT incl.
(0.97$ excl. VAT)
0.97$

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MJE340

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RoHS: yes. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Configuration:...
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Quantity in stock : 84
MJE340-ONS

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Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID....
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2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
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2N5401

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RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
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Quantity in stock : 395
TIP142

TIP142

Cost): 60pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary p...
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Quantity in stock : 26
2SC3281

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Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
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Quantity in stock : 113
SN65HVD3082ED

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Note: Low Quiescent Power 0.3mA Active Mode. Note: standby current 1nA. Note: ESD antistatic protect...
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Quantity in stock : 5
2SC2344

2SC2344

Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. C...
2SC2344
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2SA940

2SA940

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV-HA. Collector current...
2SA940
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Out of stock
2SA1302

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Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
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