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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, -300V, -0.5A, TO-126, 300V, 500mA, TO-126 (TO-225, SOT-32), TO-126, 300V - MJE350

NPN-Transistor, -300V, -0.5A, TO-126, 300V, 500mA, TO-126 (TO-225, SOT-32), TO-126, 300V - MJE350
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.57$ 0.57$
5 - 9 0.54$ 0.54$
10 - 24 0.53$ 0.53$
25 - 49 0.51$ 0.51$
50 - 99 0.50$ 0.50$
100 - 249 0.52$ 0.52$
250 - 586 0.67$ 0.67$
Quantity U.P
1 - 4 0.57$ 0.57$
5 - 9 0.54$ 0.54$
10 - 24 0.53$ 0.53$
25 - 49 0.51$ 0.51$
50 - 99 0.50$ 0.50$
100 - 249 0.52$ 0.52$
250 - 586 0.67$ 0.67$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 586
Set of 1

NPN-Transistor, -300V, -0.5A, TO-126, 300V, 500mA, TO-126 (TO-225, SOT-32), TO-126, 300V - MJE350. NPN-Transistor, -300V, -0.5A, TO-126, 300V, 500mA, TO-126 (TO-225, SOT-32), TO-126, 300V. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Type of transistor: Power Transistor. Polarity: PNP. Power: 20.8W. Number of terminals: 3. Manufacturer's marking: MJE350. Cutoff frequency ft [MHz]: 240. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. Original product from manufacturer Various. Quantity in stock updated on 21/05/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 140
MJE350-ONS

MJE350-ONS

NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-12...
MJE350-ONS
NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 7pF. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V
MJE350-ONS
NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 7pF. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V
Set of 1
0.97$ VAT incl.
(0.97$ excl. VAT)
0.97$

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