Quantity | excl. VAT | VAT incl. |
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1 - 4 | 1.11$ | 1.11$ |
5 - 9 | 1.06$ | 1.06$ |
10 - 14 | 1.00$ | 1.00$ |
Quantity | U.P | |
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1 - 4 | 1.11$ | 1.11$ |
5 - 9 | 1.06$ | 1.06$ |
10 - 14 | 1.00$ | 1.00$ |
2SA1123. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Quantity in stock updated on 24/12/2024, 02:25.
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