2SA1123

Quantity	excl. VAT	VAT incl.
1 - 4	1.11$	1.11$
5 - 9	1.06$	1.06$
10 - 24	1.00$	1.00$
25 - 49	0.94$	0.94$
50 - 99	0.92$	0.92$
100 - 249	0.90$	0.90$
250+	0.86$	0.86$

Quantity	U.P
1 - 4	1.11$	1.11$
5 - 9	1.06$	1.06$
10 - 24	1.00$	1.00$
25 - 49	0.94$	0.94$
50 - 99	0.92$	0.92$
100 - 249	0.90$	0.90$
250+	0.86$	0.86$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

2SA1123. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Quantity in stock updated on 04/04/2025, 22:25.

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Delivery in 2-3 days, with postal tracking!