Quantity (Set of 5) | excl. VAT | VAT incl. |
---|---|---|
1 - 2 | 0.94$ | 0.94$ |
3 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 19 | 0.80$ | 0.80$ |
20 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.63$ | 0.63$ |
100 - 116 | 0.59$ | 0.59$ |
Quantity (Set of 5) | U.P | |
---|---|---|
1 - 2 | 0.94$ | 0.94$ |
3 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 19 | 0.80$ | 0.80$ |
20 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.63$ | 0.63$ |
100 - 116 | 0.59$ | 0.59$ |
MB10F. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 0.5A. IFSM: 25A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: MB10S. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.8x1.4mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: maximum thickness 1.6mm. Quantity in stock updated on 25/12/2024, 06:25.
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