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Electronic components and equipment, for businesses and individuals

S1WB60B

S1WB60B
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 10.38$ 10.38$
2 - 2 9.86$ 9.86$
3 - 4 9.35$ 9.35$
5 - 9 8.83$ 8.83$
10 - 13 8.62$ 8.62$
Quantity U.P
1 - 1 10.38$ 10.38$
2 - 2 9.86$ 9.86$
3 - 4 9.35$ 9.35$
5 - 9 8.83$ 8.83$
10 - 13 8.62$ 8.62$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 1

S1WB60B. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Quantity in stock updated on 24/12/2024, 14:25.

Equivalent products :

Quantity in stock : 61
S1WB80B

S1WB80B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB80B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 800V. Quantity per case: 4. Number of terminals: 4
S1WB80B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 800V. Quantity per case: 4. Number of terminals: 4
Set of 1
3.01$ VAT incl.
(3.01$ excl. VAT)
3.01$

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S1WB60B

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Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
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DB104G

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DB107S

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MJE13007

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1N4004

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MB6S-E3-80

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ULN2803A

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