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Semiconductors Transistors

FQPF8N60C

FQPF8N60C
[TITLE]
[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 6.29$ 6.29$
5 - 9 5.98$ 5.98$
10 - 18 5.66$ 5.66$
Quantity U.P
1 - 4 6.29$ 6.29$
5 - 9 5.98$ 5.98$
10 - 18 5.66$ 5.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

FQPF8N60C. RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQPF8N60C. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.75A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 45 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1255pF. Maximum dissipation Ptot [W]: 48W. Assembly/installation: PCB through-hole mounting. Td(off): 81 ns. Td(on): 16.5 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1. Quantity in stock updated on 24/12/2024, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 716
FQPF8N80C

FQPF8N80C

C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
FQPF8N80C
C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
FQPF8N80C
C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$

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COIL-7652

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FQPF10N60C

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DSC477M025S1ACH12K

DSC477M025S1ACH12K

DC voltage: 25V. Capacitance: 470uF. Diameter: 10mm. Lifespan: 2000 hours. Lenght: 12mm. Impedance: ...
DSC477M025S1ACH12K
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FQPF8N60C

FQPF8N60C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration:...
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PPE-TIN2-E040G

PPE-TIN2-E040G

Diameter: 28...45um. Eutectic: yes. Solder temperature: +280...+410°C. Chemical composition: SN96.5...
PPE-TIN2-E040G
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