Electronic components and equipment, for businesses and individuals

S1WBS60

S1WBS60
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.11$ 2.11$
5 - 9 2.00$ 2.00$
10 - 24 1.94$ 1.94$
25 - 33 1.90$ 1.90$
Quantity U.P
1 - 4 2.11$ 2.11$
5 - 9 2.00$ 2.00$
10 - 24 1.94$ 1.94$
25 - 33 1.90$ 1.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 33
Set of 1

S1WBS60. VRRM: 600V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Number of terminals: 4. Pitch: 7.62mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Original product from manufacturer Shindengen Electric. Quantity in stock updated on 21/05/2025, 11:25.

Equivalent products :

Quantity in stock : 515
B1000D

B1000D

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
B1000D
VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50Ap. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
B1000D
VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50Ap. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 171
DB106

DB106

VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode br...
DB106
VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
DB106
VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$

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HSP75

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Quantity in stock : 87
TNY280PN

TNY280PN

Number of terminals: 7. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. H...
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Quantity in stock : 594
COILM10-AX275

COILM10-AX275

Inductance: 100uH. Resistance: 1.8 Ohms. Equivalents: Yageo AL0410-101K. Direction of terminals: axi...
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Quantity in stock : 863
DB107S

DB107S

VRRM: 1000V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
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Quantity in stock : 73
DB102G

DB102G

VRRM: 100V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode br...
DB102G
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0.30$ VAT incl.
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Quantity in stock : 515
B1000D

B1000D

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
B1000D
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0.31$ VAT incl.
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Quantity in stock : 1094
B1000S1500

B1000S1500

VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. S...
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0.70$ VAT incl.
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Quantity in stock : 60
S1WB80B

S1WB80B

VRRM: 800V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semi...
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Quantity in stock : 12427
1N4004

1N4004

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
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Quantity in stock : 12
S1WB60B

S1WB60B

VRRM: 600V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semi...
S1WB60B
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10.38$ VAT incl.
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10.38$

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