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Electronic components and equipment, for businesses and individuals

IRFP460

IRFP460
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 6.72$ 6.72$
2 - 2 6.38$ 6.38$
3 - 4 6.04$ 6.04$
5 - 9 5.71$ 5.71$
10 - 19 5.57$ 5.57$
20 - 29 5.44$ 5.44$
30 - 106 5.24$ 5.24$
Quantity U.P
1 - 1 6.72$ 6.72$
2 - 2 6.38$ 6.38$
3 - 4 6.04$ 6.04$
5 - 9 5.71$ 5.71$
10 - 19 5.57$ 5.57$
20 - 29 5.44$ 5.44$
30 - 106 5.24$ 5.24$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 106
Set of 1

IRFP460. C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 80A. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 16:25.

Equivalent products :

Out of stock
2SK1170

2SK1170

C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
2SK1170
C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. ID (T=25°C): 20A. Idss (max): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.27 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes
2SK1170
C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. ID (T=25°C): 20A. Idss (max): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.27 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes
Set of 1
11.96$ VAT incl.
(11.96$ excl. VAT)
11.96$

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