Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.63$ | 0.63$ |
10 - 24 | 0.60$ | 0.60$ |
25 - 49 | 0.57$ | 0.57$ |
50 - 99 | 0.54$ | 0.54$ |
100 - 121 | 0.49$ | 0.49$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.63$ | 0.63$ |
10 - 24 | 0.60$ | 0.60$ |
25 - 49 | 0.57$ | 0.57$ |
50 - 99 | 0.54$ | 0.54$ |
100 - 121 | 0.49$ | 0.49$ |
MUR1100E. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Forward current (AV): 1A. IFSM: 35A. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM. Quantity in stock updated on 25/12/2024, 13:25.
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