Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.63$ | 0.63$ |
10 - 24 | 0.60$ | 0.60$ |
25 - 49 | 0.58$ | 0.58$ |
50 - 99 | 0.57$ | 0.57$ |
100 - 128 | 0.52$ | 0.52$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.63$ | 0.63$ |
10 - 24 | 0.60$ | 0.60$ |
25 - 49 | 0.58$ | 0.58$ |
50 - 99 | 0.57$ | 0.57$ |
100 - 128 | 0.52$ | 0.52$ |
MUR1100E. Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Conditioning unit: 1000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Equivalents: MUR1100ERLG. Number of terminals: 2. RoHS: yes. Spec info: IFSM. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 08/06/2025, 11:25.
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