Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.32$ | 1.32$ |
5 - 9 | 1.26$ | 1.26$ |
10 - 16 | 1.19$ | 1.19$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.32$ | 1.32$ |
5 - 9 | 1.26$ | 1.26$ |
10 - 16 | 1.19$ | 1.19$ |
2SD1062. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 280. Minimum hFE gain: 70. Collector current: 12A. Ic(pulse): 15A. Marking on the case: D1062. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 1.2us. Tf(min): 0.4us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: high-speed inverters, converters, low-sat. Spec info: complementary transistor (pair) 2SB826. Quantity in stock updated on 25/12/2024, 15:25.
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