FET and MOSFET transistors

P-channel transistor, -200V, 12A, TO-247AC. Drain-source voltage (Vds): -200V. Max drain current: 12A. Housing: TO-247AC. Type of transistor: MOSFET power transistor. Channel type: P. Power: 150W. On-resistance Rds On: 0.5 Ohms

P-channel transistor, 31A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=25°C): 31A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1200pF. Cost): 520pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71ms. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 110A. ID (T=100°C): 22A. IDss (min): 25uA. Marking on the case: IRFR5305. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

ROHS: Yes. Housing: TO252AA, DPAK. Power: 89W. Assembly/installation: SMD. Type of transistor: P-MOSFET, HEXFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: -55V. Drain current: -31A. On-state resistance: 65m Ohms. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 1.4K/W. Charge: 42nC

P-channel transistor, 18A, 250uA, D-PAK ( TO-252 ), D-PAK TO-252AA, 55V. ID (T=25°C): 18A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. C(in): 650pF. Cost): 270pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 64A. ID (T=100°C): 11A. IDss (min): 25uA. Equivalents: IRFR5505TRLPBF, IRFR5505TRPBF. Pd (Power Dissipation, Max): 57W. On-resistance Rds On: 0.11 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, 5.1A, 500uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 5.1A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 270pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: High-speed switching. G-S Protection: no. Id(imp): 20A. ID (T=100°C): 3.2A. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 9.6 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -60V, -5.1A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -5.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR9014PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -3.1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 9.6 ns. Ciss Gate Capacitance [pF]: 270pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -55V, -11A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR9024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.175 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -55V, -11A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR9024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.175 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, TO252AA. Housing: TO252AA. Series: IRFR. Polarity: MOSFET P. Vdss (Drain to Source Voltage): -60V. Id @ Tc=25°C (Continuous Drain Current): 8.8A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 42W. Mounting Type: THT

P-channel transistor, 5.6A, 5.6A, D-PAK TO-252AA, 100V. ID (T=25°C): 5.6A. Idss (max): 5.6A. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.6A. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET

P-channel transistor, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=25°C): 6.6A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 350pF. Cost): 110pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26A. ID (T=100°C): 4.2A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -100V, -6.6A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR9120N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -3.9A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 3.6A, 500uA, D-PAK ( TO-252AA ), 200V. ID (T=25°C): 3.6A. Idss (max): 500uA. Housing (according to data sheet): D-PAK ( TO-252AA ). Voltage Vds(max): 200V. C(in): 340pF. Cost): 110pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. G-S Protection: no. Id(imp): 14A. ID (T=100°C): 2.3A. IDss (min): 100uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 7.3 ns. Td(on): 8.8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -200V, -3.6A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -3.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR9220PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 7.3 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -20V, -24A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -24A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L5602S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.042 Ohms @ -12A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 9.7 ns. Switch-off delay tf[nsec.]: 53 ns. Ciss Gate Capacitance [pF]: 1460pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -0.76A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -0.76A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: D. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ -0.3A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 75pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 3A, 5uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 30 v. ID (T=25°C): 3A. Idss (max): 5uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 30 v. C(in): 510pF. Cost): 71pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 24A. ID (T=100°C): 2.4A. IDss (min): 1uA. Note: screen printing/SMD code H. Marking on the case: H. Number of terminals: 3. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 0.098 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -3A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.165 Ohms @ -2.6A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 350 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 88pF. Maximum dissipation Ptot [W]: 1.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -20V, -0.62A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -0.62A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ -0.61A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 97pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 3.7A, 25uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V. ID (T=25°C): 3.7A. Idss (max): 25uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 20V. C(in): 633pF. Cost): 145pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 22A. ID (T=100°C): 2.2A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.05 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 588 ns. Td(on): 350 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 1.2V. Vgs(th) min.: 0.4V

P-channel transistor, PCB soldering (SMD), SOT-23, -20V, -3.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -3.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.135 Ohms @ -3.1A. Gate breakdown voltage Ugs [V]: -1.2V. Switch-on time ton [nsec.]: 350 ns. Switch-off delay tf[nsec.]: 588 ns. Ciss Gate Capacitance [pF]: 633pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C