FET and MOSFET transistors

P-channel transistor, TO-220AB, -55V, -19A, 17A, -55V. Housing: TO-220AB. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -19A. Max drain current: 17A. Drain-source voltage (Vds): -55V. Manufacturer's marking: IRF9Z34NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -10A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 620pF. Maximum dissipation Ptot [W]: 68W. Type of transistor: MOSFET power transistor. Channel type: P. Power: 56W. On-resistance Rds On: 0.10 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=25°C): 19A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 620pF. Cost): 280pF. Channel type: P. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 68A. ID (T=100°C): 14A. IDss (min): 25uA. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -55V, -19A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -19A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F9Z34NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -10A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 620pF. Maximum dissipation Ptot [W]: 68W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 1.1A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.1A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 270pF. Cost): 170pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: P-channel MOSFET transistor. Id(imp): 8.8A. ID (T=100°C): 0.8A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

P-channel transistor, 1.1A, DIP-4, -60V. Max drain current: 1.1A. Housing: DIP-4. Drain-source voltage (Vds): -60V. Type of transistor: MOSFET power transistor. Channel type: P. On-resistance Rds On: 0.50 Ohms

P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.8A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: FET. Function: High-speed switching. Id(imp): 13A. ID (T=100°C): 1.1A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no

P-channel transistor, PCB soldering, HD-1, -60V, -1.6A. Housing: PCB soldering. Housing: HD-1. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9024PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.28 Ohms @ -0.96A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 570pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 0.7A, 500uA, DIP, DH-1 house, DIP-4, 100V. ID (T=25°C): 0.7A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 200pF. Cost): 94pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 5.6A. ID (T=100°C): 0.49A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET POWWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

P-channel transistor, PCB soldering, DIP4, -100V, -0.7A, 1.2 Ohms. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.7A. Housing (JEDEC standard): 1.2 Ohms. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9110PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.42A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 0.1A, 0.1A, DIP, DH-1 house, DIP-4, 100V. ID (T=25°C): 0.1A. Idss (max): 0.1A. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.6A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering, DIP4, -100V, -1A. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9120PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ -0.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 9.6 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 390pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 0.56A, 0.56A, DIP, DH-1 house, DIP-4, 200V. ID (T=25°C): 0.56A. Idss (max): 0.56A. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.34A. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering, HD-1, -200V, -0.56A. Housing: PCB soldering. Housing: HD-1. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -0.56A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9220PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -0.34A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 7.3 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, ITO-220AB, -100V, -11A. Housing: PCB soldering. Housing: ITO-220AB. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI9540GPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 24 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 4.3A, 4.3A, TO-220FP, TO-220F, 200V. ID (T=25°C): 4.3A. Idss (max): 4.3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.7A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: td(on) 12ns, td(off) 28ns

P-channel transistor, 4.1A, 4.1A, TO-220FP, TO-220F, 250V. ID (T=25°C): 4.1A. Idss (max): 4.1A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: td(on) 12ns, td(off) 34ns

P-channel transistor, 1.5A, 1.5A, SOT-223 ( TO-226 ), SOT-223, 100V. ID (T=25°C): 1.5A. Idss (max): 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 0.96A. Note: b47kaa. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 0.54 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering (SMD), SOT-223, -60V, -0.18A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -0.18A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FE. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -1.1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 9.6 ns. Ciss Gate Capacitance [pF]: 270pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 1.1A, 500uA, SOT-223 ( TO-226 ), SOT-223, 100V. ID (T=25°C): 1.1A. Idss (max): 500uA. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 100V. C(in): 200pF. Cost): 94pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 8.8A. ID (T=100°C): 0.69A. IDss (min): 100uA. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

P-channel transistor, PCB soldering (SMD), SOT-223, -100V, -1.1A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -1.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.66A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 23A, 250mA, TO-247, TO-247AC, 100V. ID (T=25°C): 23A. Idss (max): 250mA. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1300pF. Cost): 400pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. ID (T=100°C): 16A. IDss (min): 25mA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.117 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 51 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

P-channel transistor, PCB soldering, TO-247AC, -100V, -23A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -23A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP9140NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.117 Ohms @ -13A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering, TO-247AC, -100V, -21A, 180W. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -21A. Housing (JEDEC standard): 180W. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP9140PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ -13A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 12A, 500uA, TO-247, TO-247AC, 200V. ID (T=25°C): 12A. Idss (max): 500uA. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1200pF. Cost): 370pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 7.5A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.57 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: complementary transistor (pair) IRFP240. Drain-source protection : yes. G-S Protection: no

P-channel transistor, PCB soldering, TO-247, -200V, -12A, 150W. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -12A. Housing (JEDEC standard): 150W. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP9240PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -7.2A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C