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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V - IRFR9024

P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V - IRFR9024
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.97$ 0.97$
5 - 9 0.92$ 0.92$
10 - 24 0.88$ 0.88$
25 - 49 0.83$ 0.83$
50 - 99 0.81$ 0.81$
100 - 169 0.74$ 0.74$
Quantity U.P
1 - 4 0.97$ 0.97$
5 - 9 0.92$ 0.92$
10 - 24 0.88$ 0.88$
25 - 49 0.83$ 0.83$
50 - 99 0.81$ 0.81$
100 - 169 0.74$ 0.74$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 169
Set of 1

P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V - IRFR9024. P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100us. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 16/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 72
IRFU9024

IRFU9024

P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 8.8A. Id...
IRFU9024
P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFU9024
P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$

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