Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 24 | 0.80$ | 0.80$ |
25 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.74$ | 0.74$ |
100 - 178 | 0.74$ | 0.74$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 24 | 0.80$ | 0.80$ |
25 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.74$ | 0.74$ |
100 - 178 | 0.74$ | 0.74$ |
P-channel transistor, 31A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR5305. P-channel transistor, 31A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=25°C): 31A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1200pF. Cost): 520pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71ms. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 22A. IDss (min): 25uA. Marking on the case: IRFR5305. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 21/04/2025, 00:25.
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