FET and MOSFET transistors

P-channel transistor, TO-220FP, TO-220F, 630V. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 630V. C(in): 1250pF. Cost): 40pF. Channel type: P. Collector current: 40A. Ic(pulse): 200A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. Spec info: Panasonic--TX-P50VT20EA. CE diode: no. Germanium diode: no

P-channel transistor, 3.5A, 1uA, TSOP, TSMT6, 30 v. ID (T=25°C): 3.5A. Idss (max): 1uA. Housing: TSOP. Housing (according to data sheet): TSMT6. Voltage Vds(max): 30 v. C(in): 780pF. Cost): 180pF. Channel type: P. Conditioning: roll. Drain-source protection : diode. Type of transistor: MOSFET. Function: DC-DC voltage converter. Id(imp): 14A. IDss (min): 1uA. Marking on the case: TM. Temperature: +150°C. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 65m Ohms. RoHS: yes. Pitch: 2.9x1.6mm. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 15 ns. Technology: Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 6. Quantity per case: 1. Conditioning unit: 3000. G-S Protection: yes

P-channel transistor, 4.4A, 4.4A, TO-220FP, TO-220F, 200V. ID (T=25°C): 4.4A. Idss (max): 4.4A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.3A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Quantity per case: 1

P-channel transistor, 3A, 3A, 200V. ID (T=25°C): 3A. Idss (max): 3A. Voltage Vds(max): 200V. Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 1.5 Ohms. Technology: V-MOS (F). Quantity per case: 1

P-channel transistor, 3.4A, 3.4A, 250V. ID (T=25°C): 3.4A. Idss (max): 3.4A. Voltage Vds(max): 250V. Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 2.6A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 1.3 Ohms. Technology: V-MOS TO220F. Quantity per case: 1. Note: On 13ns, Off 40ns

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.138 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.2A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N9. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 210pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -3A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M5. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -0.9V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 715pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -20V, -4.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: D3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.7A. Gate breakdown voltage Ugs [V]: -1.0V. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 71 ns. Ciss Gate Capacitance [pF]: 1020pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -7.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -7.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 1225pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -6A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 2.45A, 5nA, TSOP, TSOP-6, 20V. ID (T=25°C): 2.45A. Idss (max): 5nA. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. Channel type: P. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 1.95A. IDss (min): 1nA. Pd (Power Dissipation, Max): 1nA. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) min.: 0.45V. Number of terminals: 6. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 45ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 18 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

P-channel transistor, 11.4A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 11.4A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 41ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 9.1A. IDss (min): 1uA. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431BDY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 1600pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.6A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431CDY-T1-GE3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1006pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.6A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

P-channel transistor, 8.8A, 8.8A, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 8.8A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Quantity per case: 1

P-channel transistor, 7.1A, 7.1A, SO, SO-8, 30 v. ID (T=25°C): 7.1A. Idss (max): 7.1A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Trr Diode (Min.): 60 ns. ID (T=100°C): 5.7A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 0.02 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no

P-channel transistor, 7.3A, 7.3A, SO, SO-8, 30 v. ID (T=25°C): 7.3A. Idss (max): 7.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. ID (T=100°C): 5.9A. Number of terminals: 8. Pd (Power Dissipation, Max): 5W. On-resistance Rds On: 0.024 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Quantity per case: 2. Function: td(on) 10ns, td(off) 45ns

P-channel transistor, 2.4A, 2.4A, SO, SO-8, 60V. ID (T=25°C): 2.4A. Idss (max): 2.4A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: P. Conditioning: roll. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C. Quantity per case: 2. Conditioning unit: 2500