P-channel transistor, 1.1A, 500uA, DIP, DH-1 house, DIP-4, 60V - IRFD9014

P-channel transistor, 1.1A, 500uA, DIP, DH-1 house, DIP-4, 60V - IRFD9014. P-channel transistor, 1.1A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.1A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 270pF. Cost): 170pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: P-channel MOSFET transistor. Id(imp): 8.8A. ID (T=100°C): 0.8A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 16/04/2025, 01:25.