Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.28$ | 1.28$ |
5 - 9 | 1.21$ | 1.21$ |
10 - 24 | 1.15$ | 1.15$ |
25 - 49 | 1.09$ | 1.09$ |
50 - 99 | 1.06$ | 1.06$ |
100 - 249 | 1.03$ | 1.03$ |
250+ | 0.98$ | 0.98$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.28$ | 1.28$ |
5 - 9 | 1.21$ | 1.21$ |
10 - 24 | 1.15$ | 1.15$ |
25 - 49 | 1.09$ | 1.09$ |
50 - 99 | 1.06$ | 1.06$ |
100 - 249 | 1.03$ | 1.03$ |
250+ | 0.98$ | 0.98$ |
P-channel transistor, 0.1A, 0.1A, DIP, DH-1 house, DIP-4, 100V - IRFD9120. P-channel transistor, 0.1A, 0.1A, DIP, DH-1 house, DIP-4, 100V. ID (T=25°C): 0.1A. Idss (max): 0.1A. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.6A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Quantity in stock updated on 16/04/2025, 01:25.
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