Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 5.77$ | 5.77$ |
2 - 2 | 5.48$ | 5.48$ |
3 - 4 | 5.19$ | 5.19$ |
5 - 9 | 4.91$ | 4.91$ |
10 - 19 | 4.79$ | 4.79$ |
20 - 29 | 4.68$ | 4.68$ |
30 - 243 | 4.50$ | 4.50$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 5.77$ | 5.77$ |
2 - 2 | 5.48$ | 5.48$ |
3 - 4 | 5.19$ | 5.19$ |
5 - 9 | 4.91$ | 4.91$ |
10 - 19 | 4.79$ | 4.79$ |
20 - 29 | 4.68$ | 4.68$ |
30 - 243 | 4.50$ | 4.50$ |
P-channel transistor, 36A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V - FQA36P15. P-channel transistor, 36A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. ID (T=25°C): 36A. Idss (max): 100uA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 150V. C(in): 2550pF. Cost): 710pF. Channel type: P. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 198 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 144A. ID (T=100°C): 25.5A. IDss (min): 10uA. Pd (Power Dissipation, Max): 294W. On-resistance Rds On: 0.076 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 50 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Low gate charge (typical 81nC). G-S Protection: no. Quantity in stock updated on 14/04/2025, 15:25.
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