P-channel transistor, 0.46A, 10uA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V - FDV304P

P-channel transistor, 0.46A, 10uA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V - FDV304P. P-channel transistor, 0.46A, 10uA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. ID (T=25°C): 0.46A. Idss (max): 10uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. C(in): 63pF. Cost): 34pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: Low Input Charge. G-S Protection: no. Id(imp): 1.5A. ID (T=100°C): 0.87 Ohms @ -0.5A. IDss (min): 1uA. Marking on the case: 304. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 1.22 Ohms. RoHS: yes. Spec info: Operation gate voltage as low as 2.5V. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.65V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 02/06/2025, 11:25.