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Semiconductors Transistors

2SK2611

2SK2611
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 6.32$ 6.32$
2 - 2 6.01$ 6.01$
3 - 4 5.69$ 5.69$
5 - 9 5.37$ 5.37$
10 - 19 5.25$ 5.25$
20 - 29 5.12$ 5.12$
30 - 52 4.93$ 4.93$
Quantity U.P
1 - 1 6.32$ 6.32$
2 - 2 6.01$ 6.01$
3 - 4 5.69$ 5.69$
5 - 9 5.37$ 5.37$
10 - 19 5.25$ 5.25$
20 - 29 5.12$ 5.12$
30 - 52 4.93$ 4.93$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 52
Set of 1

2SK2611. C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 100uA. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 26/12/2024, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 45
STW11NK100Z

STW11NK100Z

C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. ...
STW11NK100Z
C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
STW11NK100Z
C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
Set of 1
5.38$ VAT incl.
(5.38$ excl. VAT)
5.38$

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RD1H477M10020BB

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IR2153S

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ELC100UF50P-105-H

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