STP11NM60

STP11NM60. C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. G-S Protection: no. Quantity in stock updated on 25/12/2024, 13:25.