Diode rectifier bridges

Forward current (AV): 8A. VRRM: 1000V. Function: Rectifier bridge. Series: KBU. Housing: SIL. Assembly/installation: PCB through-hole mounting

Rated current [A]: 8A. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 8A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 8A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1000V. Forward current (AV): 0.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 25A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: MB10S. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.8x1.4mm. RoHS: yes. Spec info: maximum thickness 1.6mm. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

VRRM: 1000V. Forward current (AV): 0.8A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: MB10F. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.9x2.5mm. RoHS: yes. Spec info: maximum thickness 2.7mm. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 32A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 0.5A. Semiconductor material: silicon. Function: 230V mains rectifier. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: B6. Number of terminals: 4. Pitch: 2.54mm. Dimensions: case dimensions 4.1x4.95mm. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA (MBS). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 32A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 20A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: MicroDIL. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 20A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 20A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Rated current [A]: 10A. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 135A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 15.1x15.1x6.3 mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1200V. Forward current (AV): 68A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 300A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Number of terminals: 5. Dimensions: 47x30x8mm. RoHS: yes. Spec info: IFSM--45° t=10ms (50Hz) 300A, t=8.3ms (60Hz) 320A. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.46V. Forward voltage Vf (min): 1.46V

VRRM: 1200V. Forward current (AV): 86A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 530A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Number of terminals: 5. Dimensions: 47x30x8mm. RoHS: yes. Spec info: IFSM--45° t=10ms (50Hz) 530A, t=8.3ms (60Hz) 570A. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): ECO-PAC 1. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Pitch: 7.5 mm. Dimensions: 25x15x4.5mm

VRRM: 250V. Forward current (AV): 5A. Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: single phase rectifier bridge. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Marking on the case: B250C5000A. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 40x21x6.5mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

VRRM: 100V. Forward current (AV): 6A. Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 250A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 23x17x6.5mm. RoHS: yes. Spec info: IFSM--200Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

VRRM: 1000V. Forward current (AV): 3A. Function: Rectifier bridge. Specificity: fast. Trr: 500nsec. Forward voltage Vf: 1.3V. Series: YBS. Dimensions: 6.6x7.3x1.4mm. Assembly/installation: surface-mounted component (SMD)

Rated current [A]: 0.8A. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 40A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Number of terminals: 4. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4

VRRM: 800V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Number of terminals: 4. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4

VRRM: 600V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Number of terminals: 4. Pitch: 7.62mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4

VRRM: 600V. Housing: SMD. Average Rectified Current (Max): 0.8A. Diode type: Single Phase. Series: S250

VRRM: 800V. Forward current (AV): 0.8A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 40A. MRI (max): 1mA. MRI (min): 10uA. Number of terminals: 4. Pitch: 2.54mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA (MBS). Housing (according to data sheet): MiniDIL / SLIM. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 1.2V