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Semiconductors Diodes
Diode rectifier bridges

Diode rectifier bridges

220 products available
Products per page :
1...678 9
Quantity in stock : 948
KBU810

KBU810

Function: Rectifier bridge. Forward current (AV): 8A. VRRM: 1000V. Series: KBU. Housing: SIL. Assemb...
KBU810
Function: Rectifier bridge. Forward current (AV): 8A. VRRM: 1000V. Series: KBU. Housing: SIL. Assembly/installation: PCB through-hole mounting
KBU810
Function: Rectifier bridge. Forward current (AV): 8A. VRRM: 1000V. Series: KBU. Housing: SIL. Assembly/installation: PCB through-hole mounting
Set of 1
0.71$ VAT incl.
(0.71$ excl. VAT)
0.71$
Quantity in stock : 622
KBU8B

KBU8B

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm...
KBU8B
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 270A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
KBU8B
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 270A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
2.29$ VAT incl.
(2.29$ excl. VAT)
2.29$
Quantity in stock : 398
KBU8J

KBU8J

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm...
KBU8J
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Housing (JEDEC standard): 8A. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 270A. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
KBU8J
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Housing (JEDEC standard): 8A. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 270A. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 57
KBU8K

KBU8K

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm...
KBU8K
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 270A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
KBU8K
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 270A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 85
KBU8M

KBU8M

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
KBU8M
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: KBU8M, KBU807. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 21.5x18.3x3.4mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--200Ap (t=8.3ms), IFSM--180Ap (t=10ms)
KBU8M
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: KBU8M, KBU807. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 21.5x18.3x3.4mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--200Ap (t=8.3ms), IFSM--180Ap (t=10ms)
Set of 1
0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$
Quantity in stock : 580
MB10F

MB10F

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
MB10F
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 0.5A. IFSM: 25A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: MB10S. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.8x1.4mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: maximum thickness 1.6mm
MB10F
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 0.5A. IFSM: 25A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: MB10S. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.8x1.4mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: maximum thickness 1.6mm
Set of 5
0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$
Quantity in stock : 698
MB10S

MB10S

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
MB10S
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 0.8A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: MB10F. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.9x2.5mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: maximum thickness 2.7mm
MB10S
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 0.8A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: MB10F. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.9x2.5mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: maximum thickness 2.7mm
Set of 5
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$
Quantity in stock : 4650
MB6S

MB6S

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA....
MB6S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 32A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
MB6S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 32A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 251
MB6S-E3-80

MB6S-E3-80

Semiconductor material: silicon. Function: 230V mains rectifier. Forward current (AV): 0.5A. IFSM: 3...
MB6S-E3-80
Semiconductor material: silicon. Function: 230V mains rectifier. Forward current (AV): 0.5A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: B6. Pitch: 2.54mm. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA (MBS). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Number of terminals: 4. Dimensions: case dimensions 4.1x4.95mm
MB6S-E3-80
Semiconductor material: silicon. Function: 230V mains rectifier. Forward current (AV): 0.5A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: B6. Pitch: 2.54mm. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA (MBS). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Number of terminals: 4. Dimensions: case dimensions 4.1x4.95mm
Set of 1
0.41$ VAT incl.
(0.41$ excl. VAT)
0.41$
Quantity in stock : 7603
MB8S

MB8S

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA....
MB8S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 32A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
MB8S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 32A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 273772
MBS6

MBS6

Function: Rectifier bridge. Forward current (AV): 1A. VRRM: 600V. Equivalents: MB6SA. Dimensions: 4....
MBS6
Function: Rectifier bridge. Forward current (AV): 1A. VRRM: 600V. Equivalents: MB6SA. Dimensions: 4.70x3.80x2.50mm, TO-269AA. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA
MBS6
Function: Rectifier bridge. Forward current (AV): 1A. VRRM: 600V. Equivalents: MB6SA. Dimensions: 4.70x3.80x2.50mm, TO-269AA. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA
Set of 10
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 400
MYS125SMD

MYS125SMD

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: MicroDIL....
MYS125SMD
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: MicroDIL. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 20A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
MYS125SMD
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: MicroDIL. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 20A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
0.47$ VAT incl.
(0.47$ excl. VAT)
0.47$
Quantity in stock : 5147
MYS250

MYS250

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm...
MYS250
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 20A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
MYS250
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 20A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 13403
MYS80

MYS80

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm...
MYS80
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 20A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
MYS80
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.5A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 20A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 888
PB1002S

PB1002S

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 15.1x15.1x6.3 m...
PB1002S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 15.1x15.1x6.3 mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 10A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 135A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
PB1002S
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 15.1x15.1x6.3 mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 10A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 135A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Out of stock
PSD-68-12

PSD-68-12

Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 68...
PSD-68-12
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 68A. IFSM: 300A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.46V. Forward voltage Vf (min): 1.46V. VRRM: 1200V. Number of terminals: 5. Spec info: IFSM--45° t=10ms (50Hz) 300A, t=8.3ms (60Hz) 320A
PSD-68-12
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 68A. IFSM: 300A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.46V. Forward voltage Vf (min): 1.46V. VRRM: 1200V. Number of terminals: 5. Spec info: IFSM--45° t=10ms (50Hz) 300A, t=8.3ms (60Hz) 320A
Set of 1
27.77$ VAT incl.
(27.77$ excl. VAT)
27.77$
Quantity in stock : 4
PSD-83-12

PSD-83-12

Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 86...
PSD-83-12
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 86A. IFSM: 530A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): ECO-PAC 1. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1200V. Number of terminals: 5. Spec info: IFSM--45° t=10ms (50Hz) 530A, t=8.3ms (60Hz) 570A
PSD-83-12
Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. Forward current (AV): 86A. IFSM: 530A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): ECO-PAC 1. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1200V. Number of terminals: 5. Spec info: IFSM--45° t=10ms (50Hz) 530A, t=8.3ms (60Hz) 570A
Set of 1
26.36$ VAT incl.
(26.36$ excl. VAT)
26.36$
Quantity in stock : 144
RBV406

RBV406

Pitch: 7.5 mm. Dimensions: 25x15x4.5mm...
RBV406
Pitch: 7.5 mm. Dimensions: 25x15x4.5mm
RBV406
Pitch: 7.5 mm. Dimensions: 25x15x4.5mm
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 10
RS504

RS504

Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
RS504
Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: single phase rectifier bridge. Forward current (AV): 5A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Marking on the case: B250C5000A. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 40x21x6.5mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 250V
RS504
Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: single phase rectifier bridge. Forward current (AV): 5A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Marking on the case: B250C5000A. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 40x21x6.5mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 250V
Set of 1
2.60$ VAT incl.
(2.60$ excl. VAT)
2.60$
Quantity in stock : 16
RS602

RS602

Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon...
RS602
Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 250A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 23x17x6.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 100V. Spec info: IFSM--200Ap (t=8.3ms)
RS602
Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 250A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 23x17x6.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 100V. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
1.19$ VAT incl.
(1.19$ excl. VAT)
1.19$
Quantity in stock : 3000
RYBS3010

RYBS3010

Function: Rectifier bridge. Forward current (AV): 3A. VRRM: 1000V. Specificity: fast. Trr: 500nsec. ...
RYBS3010
Function: Rectifier bridge. Forward current (AV): 3A. VRRM: 1000V. Specificity: fast. Trr: 500nsec. Forward voltage Vf: 1.3V. Series: YBS. Dimensions: 6.6x7.3x1.4mm. Assembly/installation: surface-mounted component (SMD)
RYBS3010
Function: Rectifier bridge. Forward current (AV): 3A. VRRM: 1000V. Specificity: fast. Trr: 500nsec. Forward voltage Vf: 1.3V. Series: YBS. Dimensions: 6.6x7.3x1.4mm. Assembly/installation: surface-mounted component (SMD)
Set of 1
0.21$ VAT incl.
(0.21$ excl. VAT)
0.21$
Quantity in stock : 4817
S125-SLIMSMD

S125-SLIMSMD

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA....
S125-SLIMSMD
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.8A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 40A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
S125-SLIMSMD
RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Rated current [A]: 0.8A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 40A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 13
S1WB60B

S1WB60B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB60B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
S1WB60B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
Set of 1
10.38$ VAT incl.
(10.38$ excl. VAT)
10.38$
Quantity in stock : 61
S1WB80B

S1WB80B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB80B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 800V. Quantity per case: 4. Number of terminals: 4
S1WB80B
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. VRRM: 800V. Quantity per case: 4. Number of terminals: 4
Set of 1
3.01$ VAT incl.
(3.01$ excl. VAT)
3.01$
Quantity in stock : 34
S1WBS60

S1WBS60

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WBS60
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
S1WBS60
Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch: 7.62mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. VRRM: 600V. Quantity per case: 4. Number of terminals: 4
Set of 1
2.11$ VAT incl.
(2.11$ excl. VAT)
2.11$
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