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Semiconductors Transistors

2N2222A-PL

2N2222A-PL
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.46$ 1.46$
2 - 2 1.39$ 1.39$
3 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.17$ 1.17$
25 - 36 0.96$ 0.96$
Quantity (Set of 10) U.P
1 - 1 1.46$ 1.46$
2 - 2 1.39$ 1.39$
3 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.17$ 1.17$
25 - 36 0.96$ 0.96$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 352
Set of 10

2N2222A-PL. C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.8A. Note: complementary transistor (pair) 2N2907A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 250
KSP2222A

KSP2222A

Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. M...
KSP2222A
Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
KSP2222A
Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 164
PN2222A

PN2222A

Cost): 75pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General P...
PN2222A
Cost): 75pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
PN2222A
Cost): 75pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.57$ VAT incl.
(1.57$ excl. VAT)
1.57$

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2N2222A

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Quantity in stock : 250
KSP2222A

KSP2222A

Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. M...
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BAT-H-SN-22

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Quantity in stock : 2256
2N2222AG

2N2222AG

Conditioning unit: 5000. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Functio...
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TIP3055

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Quantity in stock : 352
2N2222A-PL

2N2222A-PL

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Functio...
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Quantity in stock : 553
LED5-G-00060

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Diameter/dimensions: 5mm. Color: green. Viewing angle: 30°. Material: transparent. (cd): 60mcd. (cd...
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Quantity in stock : 98
2SD965

2SD965

Cost): 50pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: ...
2SD965
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Quantity in stock : 1042
SN74HCT14N

SN74HCT14N

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