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Semiconductors Diodes Diode rectifier bridges

ABS15J

ABS15J
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.88$ 0.88$
3 - 4 0.84$ 0.84$
5 - 9 0.79$ 0.79$
10 - 19 0.75$ 0.75$
20 - 49 0.70$ 0.70$
50 - 62 0.61$ 0.61$
Quantity (Set of 5) U.P
1 - 2 0.88$ 0.88$
3 - 4 0.84$ 0.84$
5 - 9 0.79$ 0.79$
10 - 19 0.75$ 0.75$
20 - 49 0.70$ 0.70$
50 - 62 0.61$ 0.61$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 308
Set of 5

ABS15J. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 1.6...2A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. VRRM: 600V. Number of terminals: 4. Spec info: IFSM--50A (50Hz 10ms). Quantity in stock updated on 24/12/2024, 02:25.

Equivalent products :

Quantity in stock : 697
ABS15M

ABS15M

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. For...
ABS15M
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 1.6...2A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50A (50Hz 10ms). Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. VRRM: 1000V
ABS15M
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 1.6...2A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50A (50Hz 10ms). Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. VRRM: 1000V
Set of 5
0.88$ VAT incl.
(0.88$ excl. VAT)
0.88$
Quantity in stock : 1129
B1000S1500

B1000S1500

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
B1000S1500
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
B1000S1500
Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$

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Quantity in stock : 251
MB6S-E3-80

MB6S-E3-80

Semiconductor material: silicon. Function: 230V mains rectifier. Forward current (AV): 0.5A. IFSM: 3...
MB6S-E3-80
[LONGDESCRIPTION]
MB6S-E3-80
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0.41$ VAT incl.
(0.41$ excl. VAT)
0.41$
Quantity in stock : 563
B1000D

B1000D

Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
B1000D
[LONGDESCRIPTION]
B1000D
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 909
DB107S

DB107S

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
DB107S
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DB107S
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0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 61
S1WB80B

S1WB80B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB80B
[LONGDESCRIPTION]
S1WB80B
[LONGDESCRIPTION]
[MODCATID]
[LOT]
3.01$ VAT incl.
(3.01$ excl. VAT)
3.01$
Quantity in stock : 77
BTB16-600CW

BTB16-600CW

Production date: 2014/49. Igt (max): 35mA. Igt (Type): 35mA. Ih (max): 35mA. Ih (Type): 35mA. IT(RSM...
BTB16-600CW
[LONGDESCRIPTION]
BTB16-600CW
[LONGDESCRIPTION]
[MODCATID]
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1.77$ VAT incl.
(1.77$ excl. VAT)
1.77$
Quantity in stock : 18
FQPF8N60C

FQPF8N60C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration:...
FQPF8N60C
[LONGDESCRIPTION]
FQPF8N60C
[LONGDESCRIPTION]
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[LOT]
6.29$ VAT incl.
(6.29$ excl. VAT)
6.29$
Quantity in stock : 13
S1WB60B

S1WB60B

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WB60B
[LONGDESCRIPTION]
S1WB60B
[LONGDESCRIPTION]
[MODCATID]
[LOT]
10.38$ VAT incl.
(10.38$ excl. VAT)
10.38$
Quantity in stock : 34
S1WBS60

S1WBS60

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WBS60
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S1WBS60
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[MODCATID]
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2.11$ VAT incl.
(2.11$ excl. VAT)
2.11$
Quantity in stock : 10406
1N4004

1N4004

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
1N4004
[LONGDESCRIPTION]
1N4004
[LONGDESCRIPTION]
[MODCATID]
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0.0396$ VAT incl.
(0.0396$ excl. VAT)
0.0396$
Quantity in stock : 14247
CR-06JL7-1R5

CR-06JL7-1R5

Resistance: 1.5 Ohms. Power: 0.25W. Housing: SMD 1206. Tolerance: 5%. Resistance (R): 1R50. Assembly...
CR-06JL7-1R5
[LONGDESCRIPTION]
CR-06JL7-1R5
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0.0051$ VAT incl.
(0.0051$ excl. VAT)
0.0051$

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