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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V - 2N3019

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V - 2N3019
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.90$ 0.90$
5 - 9 0.86$ 0.86$
10 - 24 0.83$ 0.83$
25 - 49 0.81$ 0.81$
50 - 75 0.79$ 0.79$
Quantity U.P
1 - 4 0.90$ 0.90$
5 - 9 0.86$ 0.86$
10 - 24 0.83$ 0.83$
25 - 49 0.81$ 0.81$
50 - 75 0.79$ 0.79$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 75
Set of 1

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V - 2N3019. NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. BE diode: no. C(in): 60pF. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: High Speed ​​Switching. Max hFE gain: 100. Minimum hFE gain: 50. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 140V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 7V. Quantity in stock updated on 22/08/2025, 14:15.

Technical documentation

Equivalent products :

Quantity in stock : 665
2N3019-ST

2N3019-ST

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). ...
2N3019-ST
NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.2V. Vebo: 7V
2N3019-ST
NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.2V. Vebo: 7V
Set of 1
1.22$ VAT incl.
(1.22$ excl. VAT)
1.22$

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