Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.22$ | 1.22$ |
5 - 9 | 1.16$ | 1.16$ |
10 - 24 | 1.10$ | 1.10$ |
25 - 49 | 1.04$ | 1.04$ |
50 - 99 | 1.01$ | 1.01$ |
100 - 249 | 0.99$ | 0.99$ |
250 - 667 | 0.94$ | 0.94$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.22$ | 1.22$ |
5 - 9 | 1.16$ | 1.16$ |
10 - 24 | 1.10$ | 1.10$ |
25 - 49 | 1.04$ | 1.04$ |
50 - 99 | 1.01$ | 1.01$ |
100 - 249 | 0.99$ | 0.99$ |
250 - 667 | 0.94$ | 0.94$ |
2N3019-ST. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 1A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Quantity in stock updated on 13/01/2025, 09:25.
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