IGBT modules

Channel type: N. Function: 6 x IGBT For Power Management. Collector current: 4A. Ic(pulse): 8A. Note: three phase AC motor driver. Frequency: 20kHz. Number of terminals: 24. Pd (Power Dissipation, Max): 21.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 685 ns. Td(on): 605 ns. Technology: Control Integrated POwer System (CIPOS™). Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Operating temperature: -40...+100°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 600V. Spec info: IC=4A TC=25°C, IC=2.5A TC=100°C. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G60T120. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 60A. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 480 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 375W. Maximum collector current (A): 150A. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Housing (JEDEC standard): no

C(in): 1800pF. Cost): 55pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 60A. Ic(pulse): 90A. Ic(T=100°C): 30A. Marking on the case: H30MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.85V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: Inductive Cooking, Microwave Ovens. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no

C(in): 825pF. Cost): 150pF. Channel type: N. Conditioning: plastic tube. Collector current: 20A. Ic(T=100°C): 14A. Marking on the case: GB14C40L. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8.3 ns. Td(on): 1.35 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V. Number of terminals: 3. Note: > 6KV ESD Gate Protection. Note: integrated resistors R1 G (75 Ohms), R2 GE (20k Ohms). Conditioning unit: 50. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. CE diode: no. Germanium diode: yes

C(in): 3025pF. Cost): 245pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 90A. Ic(pulse): 144A. Ic(T=100°C): 48A. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v. Number of terminals: 3. CE diode: yes. Germanium diode: no

C(in): 760pF. Cost): 220pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Extreme Light Punch Through, IGBT for 10-30kHz Switching. Collector current: 480A. Ic(pulse): 1200A. Ic(T=100°C): 200A. Number of terminals: 3. Pd (Power Dissipation, Max): 1630W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 226 ns. Td(on): 45 ns. Technology: XPT™ 900V IGBT, GenX4™. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.7V. Collector/emitter voltage Vceo: 650V. Gate/emitter voltage VGE: VGES 20V, VGEM 30V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Spec info: ICM TC=25°C, 1ms, 1200A. CE diode: no. Germanium diode: no

C(in): 9830pF. Cost): 570pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: High-Speed ​​IGBT for 20-50kHz Switching. Collector current: 310A. Ic(pulse): 840A. Ic(T=100°C): 140A. Marking on the case: IXYK140N90C3. Number of terminals: 3. Pd (Power Dissipation, Max): 1630W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 145 ns. Td(on): 40 ns. Technology: XPT™ 650V IGBT, GenX3™. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 2.15V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 900V. Gate/emitter voltage VGE: VGES 20V, VGEM 30V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Spec info: ICM TC=25°C, 1ms, 840A. CE diode: no. Germanium diode: no

C(in): 1600pF. Cost): 260pF. Channel type: N. Function: 3 CH. Collector current: 40A. Ic(pulse): 100A. Ic(T=100°C): 30A. Number of terminals: 17. Dimensions: 106.4x61.4x30.5mm. RoHS: yes. Weight: 170g. Assembly/installation: PCB through-hole mounting. Td(off): 400 ns. Td(on): 70 ns. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 2.5V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Spec info: IFSM--350Ap (t=10ms). CE diode: yes. Germanium diode: no

C(in): 2870pF. Cost): 295pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: IGBT transistor with built-in high-speed free-wheeling diode. Collector current: 70A. Ic(pulse): 220A. Ic(T=100°C): 38A. Marking on the case: GW20NC60KD. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 164 ns. Td(on): 46 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Spec info: Very Fast PowerMESH™ IGBT. CE diode: yes. Germanium diode: no

C(in): 8000pF. Cost): 280pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 74 ns. Collector current: 80A. Ic(pulse): 240A. Ic(T=100°C): 60A. Marking on the case: GW60V60DF. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 216 ns. Td(on): 57 ns. Housing: TO-247. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 7V. Spec info: Trench gate field-stop IGBT, V series. CE diode: yes. Germanium diode: no