N-P MOSFET transistor pair

MOSFET transistor. Channel type: N-P. Marking on the case: 4502C. Number of terminals: 8. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.011 Ohms (Q1), 0.1016 Ohms (Q2)

MOSFET transistor. Channel type: N-P. Function: 0.027R&0.049R (27 & 49m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel

MOSFET transistor. Channel type: N-P. Function: 0.055R&0.019R (55 & 19m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel

MOSFET transistor. Channel type: N-P. Function: 0.028R&0.035R (28 & 35m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 28/35m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2. Technology: Complementary MOSFET transistors, N-channel and P-channel. Spec info: substitute for MOSFET

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. On-resistance Rds On: 0.028 Ohms & 0.035 Ohms. Technology: Complementary MOSFET transistors, N-channel and P-channel, SCHOTTKY VDS=30V, IF=3A

MOSFET transistor. Channel type: N-P. Quantity per case: 2. Type of transistor: MOSFET. Function: Complementary Enhancement Mode FET. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Spec info: 0.025 Ohms & 0.042 Ohms

MOSFET transistor. Channel type: N-P. Function: Complementary Enhancement Mode FET. Idss: 1...5uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16.2/4.8 ns. Td(on): 6.4 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 2. Note: IDM--30Ap & 30Ap. Spec info: 0.024 Ohms & 0.036 Ohms

MOSFET transistor. Channel type: N-P. Function: MOSFET transistor. Rds (ON) very low. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.024 Ohms & 0.048 Ohms

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Complementary MOSFET transistors, N-channel and P-channel. Spec info: 0.024 Ohm & 0.038 Ohm

MOSFET transistor. Channel type: N-P. Function: Complementary Enhancement Mode FET. Marking on the case: P605. Number of terminals: 8. Pd (Power Dissipation, Max): 2.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.028 Ohms & 0.035 Ohms (VGS=10V)

MOSFET transistor. Channel type: N-P. Function: Complementary Enhancement Mode FET. Number of terminals: 8. Pd (Power Dissipation, Max): 2.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-8. Operating temperature: -55...+150°C. Quantity per case: 2. Spec info: 0.028 Ohms & 0.035 Ohms (VGS=10V)

MOSFET transistor. Channel type: N-P. Marking on the case: 4501GM. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.050 Ohms (Q2)

MOSFET transistor. Channel type: N-P. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-4L ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Quantity per case: 2. Number of terminals: 4. Note: ID(AV)--N--9A P--8A. Note: Rds-on 0.024 Ohms (N), 0.036 Ohms (P). Note: Vdss 30V (N), -30V (P)

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Assembly/installation: PCB through-hole mounting. Technology: DIP-8. Housing: DIP. Quantity per case: 2. Note: 0.025 Ohms & 0.040 Ohms

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.025 Ohms & 0.040 Ohms

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: *SMD TO-252-4L*. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.028 Ohms & 0.042 Ohms

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.028 Ohms & 0.042 Ohms

MOSFET transistor. Channel type: N-P. Function: 2N-ch and 2P-ch POWER MOSFET. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 4. Spec info: Rds-on 0.033 Ohms / 0.055 Ohms

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Enhancement Mode DUAL MOSFET (N-and P-Channel)'. Housing: DIP. Housing (according to data sheet): DIP-8. Operating temperature: -55...+150°C. Quantity per case: 2. Note: Id--8A/30Ap & 6A/20Ap. Note: Rds-on 0.025 Ohms / 0.040 Ohms. Note: Vds 30V & 30V

MOSFET transistor. Channel type: N-P. Marking on the case: KNP. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Complementary Pair Enhancement Mode MOSFET. Housing: SOT-363 ( SC-88 ). Housing (according to data sheet): SOT-363. Quantity per case: 2. Number of terminals: 6. Note: screen printing/SMD code KNP. Function: td(on) 7&10ns, td(off) 11&18ns

MOSFET transistor. Channel type: N-P. Marking on the case: 420. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P PowerTrench MOSFET. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Quantity per case: 2. Number of terminals: 6. Function: Rds-on 0.07 Ohms (Q1), 0.125 Ohms (Q2). Note: screen printing/SMD code 420

MOSFET transistor. Channel type: N-P. Conditioning: roll. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: omplementary PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Rds-on 0.042 Ohms (Q1), 0.082 Ohms (Q2). Conditioning unit: 2500. Spec info: N-channel transistor (Q1), P-channel transistor (Q2)

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.052 Ohms (Q2)

MOSFET transistor. C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.026 Ohms (Q1), 0.051 Ohms (Q2). Drain-source protection : yes. G-S Protection: no