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2SC5717

2SC5717
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 9.68$ 9.68$
Quantity U.P
1 - 1 9.68$ 9.68$
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Quantity in stock : 1
Set of 1

2SC5717. Quantity per case: 1. Semiconductor material: silicon. Function: High Speed ​​Switching. Collector current: 21A. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. Spec info: Icp 10A/64kHz, 8A/100kHz. Note: Vce(sat) 3Vmax. Quantity in stock updated on 28/12/2024, 13:25.

Equivalent products :

Quantity in stock : 32
2SC5302

2SC5302

Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT D...
2SC5302
Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT Display. Max hFE gain: 30. Minimum hFE gain: 4. Collector current: 15A. Ic(pulse): 35A. Marking on the case: C5302. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PML. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: fast speed (tf=100ns typ). Housing: TO-3PF (SOT399, 2-16E3A)
2SC5302
Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT Display. Max hFE gain: 30. Minimum hFE gain: 4. Collector current: 15A. Ic(pulse): 35A. Marking on the case: C5302. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PML. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: fast speed (tf=100ns typ). Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
5.96$ VAT incl.
(5.96$ excl. VAT)
5.96$

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