Transistors

Quantity per case: 1. Semiconductor material: silicon. Function: MONITOR. Collector current: 6A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V

Quantity per case: 1. Compatibility: CVM4967A. Semiconductor material: silicon. FT: kHz. Function: Display-HA, Hi-res. Max hFE gain: 25. Collector current: 6A. Ic(pulse): 16A. Equivalents: SAMSUNG 891 464744AA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused'. Tf(max): 0.4us. Housing: TO-3PFM ( 13-16A1A ). Housing (according to data sheet): TO-3PFM. Type of transistor: NPN. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 1500V. Vebo: 6V. Spec info: MONITOR

Quantity per case: 1. Semiconductor material: silicon. Function: Display-HA. Collector current: 10A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: MONITOR. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 7A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Spec info: VGA Monitor

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 7A. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3FP. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Max hFE gain: 8. Minimum hFE gain: 3. Collector current: 7A. Ic(pulse): 16A. Pd (Power Dissipation, Max): 60W. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf (type): 0.1us. Housing: TO-3PF ( SOT399 / 2-16E3A ). Housing (according to data sheet): TO3PML. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 7V. BE diode: no. CE diode: no

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1837. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Collector/emitter voltage Vceo: 230V

Cost): 220pF. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 10A. Pd (Power Dissipation, Max): 70W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: MONITOR

Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 8A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PFM. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V. Spec info: MONITOR. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Display-HA. Collector current: 7A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: MONITOR (F). Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. Function: Display-HA. Collector current: 7A. Note: MONITOR. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V

Quantity per case: 1. Semiconductor material: silicon. Function: Vce(sat) 3V. Collector current: 12A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Note: Monitor HA (F). Spec info: VEBO 5V. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 270. Minimum hFE gain: 120. Collector current: 5A. Ic(pulse): 10A. Marking on the case: C5103. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 0.3 ns. Tf(min): 0.1 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): CPT3 ( DPAK ) ( TO252 ) ( SOT428 ). Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Function: Motor driver, LED driver. Spec info: complementary transistor (pair) 2SA1952

Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Collector current: 10A. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Housing (according to data sheet): 2-16E3A. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 600V. Vebo: 5V. Spec info: fall time 0.15..03us (64kHz). Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. Collector current: 10A. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Function: HA, Hi-res. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Max hFE gain: 30. Minimum hFE gain: 10. Collector current: 20A. Ic(pulse): 40A. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F2A ). Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 600V. Spec info: Monitor -HA

Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Max hFE gain: 25. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Housing (according to data sheet): 2-16E3A. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 600V. Vebo: 5V. Function: Horizontal Deflection Output, high speed Switch. Housing: TO-3PF (SOT399, 2-16E3A)

Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: fast operation, for horizontal deflection (TV). Max hFE gain: 25. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Marking on the case: C5149. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.5us. Tf(min): 0.2us. Housing (according to data sheet): 2-16E3A. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 600V. Spec info: 'Triple Diffused MESA Type'. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 3V max. Collector current: 10A. Note: MONITOR, HA,Hi-res, fT--2MHz. Type of transistor: NPN. Vcbo: 1700V. Collector/emitter voltage Vceo: 700V. Spec info: TO-3P (Plastic). CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 50. Collector current: 2A. Marking on the case: C5171. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.16V. Collector/emitter voltage Vceo: 180V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1930. Function: TV, SL. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Collector current: 8A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Spec info: complementary transistor (pair) 2SA1940

Cost): 170pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 10A. Marking on the case: C5198 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 140V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1941. BE diode: no. CE diode: no

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no

Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Collector-Emitter Voltage VCEO: 230V. Collector current: 15A. Max frequency: 30MHz. Power: 150W. Housing: TO-264