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Transistors

3185 products available
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Quantity in stock : 97
STP75NF75

STP75NF75

C(in): 3700pF. Cost): 730pF. Channel type: N. Trr Diode (Min.): 132 ns. Type of transistor: MOSFET. ...
STP75NF75
C(in): 3700pF. Cost): 730pF. Channel type: N. Trr Diode (Min.): 132 ns. Type of transistor: MOSFET. Function: DC Motor Control, DC-DC & DC-AC Converters. Id(imp): 320A. ID (T=100°C): 70A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P75NF75. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0095 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 66 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Drain Current (pulsed) IDM--320Ap. Drain-source protection : yes. G-S Protection: no
STP75NF75
C(in): 3700pF. Cost): 730pF. Channel type: N. Trr Diode (Min.): 132 ns. Type of transistor: MOSFET. Function: DC Motor Control, DC-DC & DC-AC Converters. Id(imp): 320A. ID (T=100°C): 70A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P75NF75. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0095 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 66 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Drain Current (pulsed) IDM--320Ap. Drain-source protection : yes. G-S Protection: no
Set of 1
1.97$ VAT incl.
(1.97$ excl. VAT)
1.97$
Out of stock
STP7NC80ZFP

STP7NC80ZFP

Channel type: N. Type of transistor: MOSFET. Function: Zener-Protected. ID (T=100°C): 4A. ID (T=25Â...
STP7NC80ZFP
Channel type: N. Type of transistor: MOSFET. Function: Zener-Protected. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 6.5A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Quantity per case: 1
STP7NC80ZFP
Channel type: N. Type of transistor: MOSFET. Function: Zener-Protected. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 6.5A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Quantity per case: 1
Set of 1
27.37$ VAT incl.
(27.37$ excl. VAT)
27.37$
Quantity in stock : 69
STP7NK80Z

STP7NK80Z

C(in): 1138pF. Cost): 122pF. Channel type: N. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. ...
STP7NK80Z
C(in): 1138pF. Cost): 122pF. Channel type: N. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Id(imp): 20.8A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P7NK80Z. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1. Spec info: Zener-Protected. Drain-source protection : yes. G-S Protection: yes
STP7NK80Z
C(in): 1138pF. Cost): 122pF. Channel type: N. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Id(imp): 20.8A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P7NK80Z. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1. Spec info: Zener-Protected. Drain-source protection : yes. G-S Protection: yes
Set of 1
2.43$ VAT incl.
(2.43$ excl. VAT)
2.43$
Quantity in stock : 86
STP7NK80Z-ZENER

STP7NK80Z-ZENER

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration...
STP7NK80Z-ZENER
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P7NK80Z. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 5.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1138pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
STP7NK80Z-ZENER
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P7NK80Z. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 5.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1138pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
3.77$ VAT incl.
(3.77$ excl. VAT)
3.77$
Quantity in stock : 45
STP7NK80ZFP

STP7NK80ZFP

Channel type: N. Housing: TO-220FP. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPA...
STP7NK80ZFP
Channel type: N. Housing: TO-220FP. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. Id(imp): 20.8A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Vgs(th) min.: 3.75V. Type of transistor: MOSFET power transistor. Max drain current: 5.2A. On-resistance Rds On: 1.8 Ohms. Number of terminals: 3. Spec info: Zener-Protected SuperMESH™Power MOSFET. Drain-source voltage (Vds): 800V. G-S Protection: yes
STP7NK80ZFP
Channel type: N. Housing: TO-220FP. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. Id(imp): 20.8A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Vgs(th) min.: 3.75V. Type of transistor: MOSFET power transistor. Max drain current: 5.2A. On-resistance Rds On: 1.8 Ohms. Number of terminals: 3. Spec info: Zener-Protected SuperMESH™Power MOSFET. Drain-source voltage (Vds): 800V. G-S Protection: yes
Set of 1
2.21$ VAT incl.
(2.21$ excl. VAT)
2.21$
Quantity in stock : 99
STP80NF06

STP80NF06

C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
STP80NF06
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
STP80NF06
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
2.61$ VAT incl.
(2.61$ excl. VAT)
2.61$
Quantity in stock : 15
STP80NF10

STP80NF10

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration...
STP80NF10
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P80NF10. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 80A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.012 Ohms @ 40A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 116 ns. Ciss Gate Capacitance [pF]: 5500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
STP80NF10
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P80NF10. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 80A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.012 Ohms @ 40A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 116 ns. Ciss Gate Capacitance [pF]: 5500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
5.03$ VAT incl.
(5.03$ excl. VAT)
5.03$
Quantity in stock : 13
STP80NF12

STP80NF12

C(in): 4300pF. Cost): 600pF. Channel type: N. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. ...
STP80NF12
C(in): 4300pF. Cost): 600pF. Channel type: N. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 320A. ID (T=100°C): 60A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P80NF12. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 40 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 120V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STP80NF12
C(in): 4300pF. Cost): 600pF. Channel type: N. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 320A. ID (T=100°C): 60A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P80NF12. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 40 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 120V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.86$ VAT incl.
(2.86$ excl. VAT)
2.86$
Quantity in stock : 14
STP80NF55-08

STP80NF55-08

C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
STP80NF55-08
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
STP80NF55-08
C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.0065 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
4.15$ VAT incl.
(4.15$ excl. VAT)
4.15$
Quantity in stock : 77
STP80NF70

STP80NF70

C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. F...
STP80NF70
C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.0098 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 68V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STP80NF70
C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.0098 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 68V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
4.80$ VAT incl.
(4.80$ excl. VAT)
4.80$
Quantity in stock : 29
STP80PF55

STP80PF55

C(in): 5500pF. Cost): 1130pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min...
STP80PF55
C(in): 5500pF. Cost): 1130pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 80A. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 35 ns. Technology: STripFETTM II Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 16V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
STP80PF55
C(in): 5500pF. Cost): 1130pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 80A. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 35 ns. Technology: STripFETTM II Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 16V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
2.16$ VAT incl.
(2.16$ excl. VAT)
2.16$
Quantity in stock : 3
STP8NC70ZFP

STP8NC70ZFP

C(in): 2350pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
STP8NC70ZFP
C(in): 2350pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 680 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 27A. ID (T=100°C): 4.3A. ID (T=25°C): 6.8A. Idss (max): 50uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.9 Ohms. Assembly/installation: PCB through-hole mounting. Td(on): 30 ns. Technology: PowerMESH™III MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 700V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: yes
STP8NC70ZFP
C(in): 2350pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 680 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 27A. ID (T=100°C): 4.3A. ID (T=25°C): 6.8A. Idss (max): 50uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.9 Ohms. Assembly/installation: PCB through-hole mounting. Td(on): 30 ns. Technology: PowerMESH™III MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 700V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: yes
Set of 1
6.16$ VAT incl.
(6.16$ excl. VAT)
6.16$
Quantity in stock : 22
STP8NK80ZFP

STP8NK80ZFP

C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. ...
STP8NK80ZFP
C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 24.8A. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P8NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 17 ns. Technology: SuperMESH™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes
STP8NK80ZFP
C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 24.8A. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P8NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 17 ns. Technology: SuperMESH™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes
Set of 1
2.41$ VAT incl.
(2.41$ excl. VAT)
2.41$
Quantity in stock : 3
STP9NB60

STP9NB60

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 5.7A. ID ...
STP9NB60
Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Quantity per case: 1
STP9NB60
Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Quantity per case: 1
Set of 1
7.19$ VAT incl.
(7.19$ excl. VAT)
7.19$
Quantity in stock : 88
STP9NK50Z

STP9NK50Z

C(in): 910pF. Cost): 125pF. Channel type: N. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. F...
STP9NK50Z
C(in): 910pF. Cost): 125pF. Channel type: N. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28.8A. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK50Z. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
STP9NK50Z
C(in): 910pF. Cost): 125pF. Channel type: N. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28.8A. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK50Z. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
1.75$ VAT incl.
(1.75$ excl. VAT)
1.75$
Quantity in stock : 134
STP9NK50ZFP

STP9NK50ZFP

C(in): 910pF. Cost): 125pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
STP9NK50ZFP
C(in): 910pF. Cost): 125pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28.8A. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK50ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
STP9NK50ZFP
C(in): 910pF. Cost): 125pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28.8A. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK50ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
Set of 1
1.57$ VAT incl.
(1.57$ excl. VAT)
1.57$
Quantity in stock : 27
STP9NK60Z

STP9NK60Z

C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. ...
STP9NK60Z
C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28A. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. IDss (min): 1us. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1
STP9NK60Z
C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28A. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. IDss (min): 1us. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1
Set of 1
2.22$ VAT incl.
(2.22$ excl. VAT)
2.22$
Quantity in stock : 69
STP9NK60Z-ZENER

STP9NK60Z-ZENER

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration...
STP9NK60Z-ZENER
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P9NK60Z. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.95 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1100pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
STP9NK60Z-ZENER
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P9NK60Z. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.95 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1100pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
3.14$ VAT incl.
(3.14$ excl. VAT)
3.14$
Quantity in stock : 47
STP9NK60ZFP

STP9NK60ZFP

C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. ...
STP9NK60ZFP
C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28A. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK60ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
STP9NK60ZFP
C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28A. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK60ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
2.11$ VAT incl.
(2.11$ excl. VAT)
2.11$
Quantity in stock : 26
STP9NK90Z

STP9NK90Z

C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min....
STP9NK90Z
C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK90Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
STP9NK90Z
C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P9NK90Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
Set of 1
4.32$ VAT incl.
(4.32$ excl. VAT)
4.32$
Quantity in stock : 1934
STQ1NK60ZR-AP

STQ1NK60ZR-AP

C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. I...
STQ1NK60ZR-AP
C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 13 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Operating temperature: -50...+150°C. Voltage Vds(max): 600V. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes
STQ1NK60ZR-AP
C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 13 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Operating temperature: -50...+150°C. Voltage Vds(max): 600V. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Out of stock
STS4DNF30L

STS4DNF30L

Function: STripFETâ„¢ Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted c...
STS4DNF30L
Function: STripFETâ„¢ Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 30V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
STS4DNF30L
Function: STripFETâ„¢ Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 30V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 128
STS4DNF60L

STS4DNF60L

Channel type: N. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. Ro...
STS4DNF60L
Channel type: N. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: STripFETâ„¢ Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
STS4DNF60L
Channel type: N. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: STripFETâ„¢ Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.80$ VAT incl.
(1.80$ excl. VAT)
1.80$
Quantity in stock : 42
STS5DNF20V

STS5DNF20V

Function: STripFETâ„¢ II Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounte...
STS5DNF20V
Function: STripFETâ„¢ II Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 20V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
STS5DNF20V
Function: STripFETâ„¢ II Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 20V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.10$ VAT incl.
(1.10$ excl. VAT)
1.10$
Quantity in stock : 42
STU309D

STU309D

Channel type: N-P. Function: N&P PowerTrench MOSFET. Pd (Power Dissipation, Max): 11W. RoHS: yes. As...
STU309D
Channel type: N-P. Function: N&P PowerTrench MOSFET. Pd (Power Dissipation, Max): 11W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Dual E nhancement Mode F ield E ffect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-4 ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Quantity per case: 2. Number of terminals: 4. Note: Dual E nhancement Mode F ield E ffect Transistor
STU309D
Channel type: N-P. Function: N&P PowerTrench MOSFET. Pd (Power Dissipation, Max): 11W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Dual E nhancement Mode F ield E ffect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-4 ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Quantity per case: 2. Number of terminals: 4. Note: Dual E nhancement Mode F ield E ffect Transistor
Set of 1
2.48$ VAT incl.
(2.48$ excl. VAT)
2.48$

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