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STP11NB40FP

STP11NB40FP
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Quantity excl. VAT VAT incl.
1 - 1 2.04$ 2.04$
Quantity U.P
1 - 1 2.04$ 2.04$
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Quantity in stock : 1
Set of 1

STP11NB40FP. C(in): 1250pF. Cost): 210pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 42.8A. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 17 ns. Technology: PowerMESH MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Note: Viso 2000VDC. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.

Equivalent products :

Quantity in stock : 37
IRFI740GLC

IRFI740GLC

C(in): 1100pF. Cost): 190pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 380 ns. Type o...
IRFI740GLC
C(in): 1100pF. Cost): 190pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 380 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge. Id(imp): 23A. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 250uA. IDss (min): 25uA. Note: Viso 2500V. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFI740GLC
C(in): 1100pF. Cost): 190pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 380 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge. Id(imp): 23A. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 250uA. IDss (min): 25uA. Note: Viso 2500V. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.76$ VAT incl.
(2.76$ excl. VAT)
2.76$
Quantity in stock : 18
FQPF8N60C

FQPF8N60C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration:...
FQPF8N60C
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQPF8N60C. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.75A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 45 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1255pF. Maximum dissipation Ptot [W]: 48W. Assembly/installation: PCB through-hole mounting. Td(off): 81 ns. Td(on): 16.5 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1
FQPF8N60C
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQPF8N60C. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.75A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 45 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1255pF. Maximum dissipation Ptot [W]: 48W. Assembly/installation: PCB through-hole mounting. Td(off): 81 ns. Td(on): 16.5 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1
Set of 1
6.29$ VAT incl.
(6.29$ excl. VAT)
6.29$
Quantity in stock : 463
IRFS740

IRFS740

C(in): 1500pF. Cost): 178pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
IRFS740
C(in): 1500pF. Cost): 178pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 40A. ID (T=100°C): 3.9A. ID (T=25°C): 5.5A. Idss (max): 1000uA. IDss (min): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+175°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFS740
C(in): 1500pF. Cost): 178pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 40A. ID (T=100°C): 3.9A. ID (T=25°C): 5.5A. Idss (max): 1000uA. IDss (min): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+175°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.29$ VAT incl.
(1.29$ excl. VAT)
1.29$

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