Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). VRRM: 200V. Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 0.001mA. Marking on the case: SB3200. Equivalents: Vishay--VSB3200. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap 50Hz 8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.68V

Housing: DO201. VRRM: 40V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 3A. Mounting Type: THT. Reverse Leakage Current: 500uA / 40V. Series: SB3. MSL: n/a

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap 50Hz 8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.79V

VRRM: 100V. Housing: DO201. Average Rectified Current per Diode: 5A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.80V / 5A. Mounting Type: THT. Reverse Leakage Current: 500uA / 100V. Reverse Recovery Time (Max): 310A. Information: 0.79V @ 5A. Series: SB5. MSL: n/a

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 150V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 50mA. MRI (min): 8uA. Number of terminals: 2. RoHS: yes. Spec info: 125Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.92V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 200V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 0.5mA. MRI (min): 0.1mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.9V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.67V

Housing: DO201. VRRM: 60V. Average Rectified Current per Diode: 5A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.55V / 5A. Mounting Type: THT. Reverse Leakage Current: 50uA / 60V. Information: 3rd Gen. Series: SB5. MSL: n/a

Housing: TO220. VRRM: 100V. Average Rectified Current per Diode: 10A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: schottky. Diode Configuration: PCB soldering. Forward Voltage (Max): <0.85V / 10A. Mounting Type: THT. Reverse Leakage Current: 100uA / 100V. Reverse Recovery Time (Max): 110A. Information: 0.85V @ 10A. Series: SCBT20. MSL: 300uA..7mA

Forward current (AV): 30A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Cj: 700pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Note: SMPS DIODE. Note: dual silicon diode. Note: Ifsm--275A/8.3mS 60Hz. Number of terminals: 3. Spec info: Schottky rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

VRRM: 45V. Average Rectified Current per Diode: 25A. Diode type: schottky. Diode Configuration: independent. Mounting Type: THT. Information: 3rd Gen

Forward current (AV): 30A. IFSM: 300A. Housing: P-600. Housing (according to data sheet): P600 ( 8x7.5mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 10mA. MRI (min): 0.3mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap T=10mS 50Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.42V. Forward voltage Vf (min): 0.25V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Note: GI, S. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 200V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--75App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--75App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 300V. Semiconductor material: silicon. Note: SUPER FAST RECTIFIER. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Housing: DO213AA (MiniMELF). VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.82V / 1A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 100V. Series: SGL

Housing: DO213AA (MiniMELF). VRRM: 40V. Average Rectified Current per Diode: 1A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: SMD. Reverse Leakage Current: 0.5mA / 40V. Reverse Recovery Time (Max): 10A. Information: 3rd Gen. Series: SGL. MSL: 0.5mA..5mA

Housing: DO213AA (MiniMELF). VRRM: 40V. Average Rectified Current per Diode: 2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.53V / 2A. Mounting Type: SMD. Reverse Leakage Current: 40uA / 40V. Information: 3rd Gen. Series: SGL

Housing: DO214AC (SMA). VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.85V / 1A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 100V. Series: SK

Housing: DO214AC (SMA). VRRM: 50V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.70V / 1A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 40V. Series: SK

Housing: DO214AA (SMB). VRRM: 100V. Average Rectified Current per Diode: 2A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.85V / 2A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 100V. Reverse Recovery Time (Max): 55A. Information: 0.85V @ 2A. Series: SK. MSL: 500uA..10mA

Housing: DO214AA (SMB). VRRM: 40V. Average Rectified Current per Diode: 2A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 2A. Mounting Type: SMD. Reverse Leakage Current: 500uA / 40V. Series: SK

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). VRRM: 40V. Semiconductor material: Sb. Note: screen printing/SMD code SK24A. MRI (max): 10mA. Marking on the case: SK24A. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V