Standard and Rectifier Diodes

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 2A. IFSM: 50A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Note: Schottky rectifier diode. Quantity per case: 1. Spec info: IFSM--50Ap (t=10ms)

Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky diode. Forward current (AV): 15A. IFSM: 275A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: Total IF(AV) 2ch 30A. Spec info: Ifsm--275A t=8.3ms

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 100A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 100Ap 50Hz 8.2ms

Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 6mA. MRI (min): 0.001mA. Marking on the case: SB3200. Equivalents: Vishay--VSB3200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.68V. VRRM: 200V. Number of terminals: 2. Spec info: IFSM--80Ap 50Hz 8.3ms

Housing: DO201. Assembly/installation: THT. Max reverse voltage: 40V. Conditioning: Ammo Pack

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 100A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.79V. VRRM: 90V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 100Ap 50Hz 8.2ms

RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): Schottky rectifier diode. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 5A. Ifsm [A]: 310A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 0.6mA. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.79V @ 5A

Cj: 150pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 125A. MRI (max): 50mA. MRI (min): 8uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.92V. VRRM: 150V. Number of terminals: 2. Quantity per case: 1. Spec info: 125Ap

Cj: 120pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 125A. MRI (max): 0.5mA. MRI (min): 0.1mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.9V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 125Ap (t=10ms)

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 125A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 125Ap (t=10ms)

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 125A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.67V. VRRM: 50V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 125Ap (t=10ms)

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Forward current [A]: 2x10A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 300uA..7mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.85V @ 10A. Component family: dual Schottky rectifier diode

Cj: 700pF. Conditioning: plastic tube. Dielectric structure: common cathode. Semiconductor material: Sb. Forward current (AV): 30A. IFSM: 275A. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: SMPS DIODE. Note: Ifsm--275A/8.3mS 60Hz. Conditioning unit: 30. Note: dual silicon diode. Spec info: Schottky rectifier diode

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 30A. IFSM: 300A. MRI (max): 10mA. MRI (min): 0.3mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: P-600. Housing (according to data sheet): P600 ( 8x7.5mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.42V. Forward voltage Vf (min): 0.25V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap T=10mS 50Hz

Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Note: GI, S. Quantity per case: 1

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Forward current (AV): 2A. IFSM: 75A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Spec info: Ifsm--75App/8.3mS

Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Forward current (AV): 2A. IFSM: 75A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V. VRRM: 400V. Spec info: Ifsm--75App/8.3mS

Semiconductor material: silicon. Forward current (AV): 3A. Note: SUPER FAST RECTIFIER. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 300V

Cj: 80pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 6A. IFSM: 150A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (9.1x9.1mm). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap/8.3ms

RoHS: yes. Component family: Silicon Schottky rectifier diode. Housing: PCB soldering (SMD). Housing: miniMELF. Housing (JEDEC standard): SOD-80. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 1A. Ifsm [A]: 10A. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 0.5mA..5mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.5V @ 1A

Semiconductor material: Sb. Forward current (AV): 2A. IFSM: 50A. MRI (max): 10mA. Marking on the case: SK24A. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Note: screen printing/SMD code SK24A. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms

Semiconductor material: Sb. Forward current (AV): 2A. IFSM: 50A. MRI (max): 10mA. Marking on the case: SK26A. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. VRRM: 60V. Number of terminals: 2. Note: screen printing/SMD code SK24A. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SMC. Housing (JEDEC standard): DO-214AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 100A. Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 500uA..20mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.75V @ 3A

Cj: 200pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 5A. IFSM: 100A. MRI (max): 1mA. MRI (min): 100uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.85V. VRRM: 100V. Number of terminals: 2. Other name: SK510C. Marking on the case: SK510. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SOD-123FL. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 1A. Ifsm [A]: 22A. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 200uA..2mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.55V @ 1A