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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

544 products available
Products per page :
Quantity in stock : 53
RG4C

RG4C

Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x...
RG4C
Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 1000V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
RG4C
Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 1000V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$
Quantity in stock : 67
RG4Z

RG4Z

Forward current (AV): 3A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x...
RG4Z
Forward current (AV): 3A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 200V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
RG4Z
Forward current (AV): 3A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 200V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 1
2.22$ VAT incl.
(2.22$ excl. VAT)
2.22$
Quantity in stock : 5252
RGP02-20E

RGP02-20E

Forward current (AV): 0.5A. IFSM: 20A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2....
RGP02-20E
Forward current (AV): 0.5A. IFSM: 20A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). VRRM: 2000V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V
RGP02-20E
Forward current (AV): 0.5A. IFSM: 20A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). VRRM: 2000V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 193
RGP10D

RGP10D

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( ...
RGP10D
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 200V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RGP10D
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 200V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 64
RGP10G

RGP10G

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( ...
RGP10G
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RGP10G
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$
Quantity in stock : 737
RGP10J

RGP10J

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( ...
RGP10J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RGP10J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 18
RGP15G

RGP15G

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V. Semiconductor material: si...
RGP15G
Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting
RGP15G
Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 99
RGP15J

RGP15J

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: si...
RGP15J
Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting
RGP15J
Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting
Set of 1
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$
Quantity in stock : 41
RGP15M

RGP15M

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: s...
RGP15M
Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting
RGP15M
Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting
Set of 1
0.76$ VAT incl.
(0.76$ excl. VAT)
0.76$
Quantity in stock : 49
RGP20B

RGP20B

Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/...
RGP20B
Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm
RGP20B
Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 28
RGP20D

RGP20D

Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/...
RGP20D
Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm
RGP20D
Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 12
RGP30G

RGP30G

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S...
RGP30G
Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S
RGP30G
Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 57
RGP30M

RGP30M

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V....
RGP30M
Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting
RGP30M
Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 2
RH2F

RH2F

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4....
RH2F
Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
RH2F
Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
4.10$ VAT incl.
(4.10$ excl. VAT)
4.10$
Quantity in stock : 2
RH4F

RH4F

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( ...
RH4F
Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V
RH4F
Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V
Set of 1
4.66$ VAT incl.
(4.66$ excl. VAT)
4.66$
Out of stock
RHRP15120

RHRP15120

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-...
RHRP15120
Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
RHRP15120
Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
Set of 1
3.45$ VAT incl.
(3.45$ excl. VAT)
3.45$
Quantity in stock : 230
RHRP1560

RHRP1560

Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
RHRP1560
Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Spec info: Ifsm--200Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
RHRP1560
Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Spec info: Ifsm--200Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
Set of 1
2.37$ VAT incl.
(2.37$ excl. VAT)
2.37$
Quantity in stock : 3392
RHRP30120

RHRP30120

Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC....
RHRP30120
Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
RHRP30120
Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
Set of 1
3.98$ VAT incl.
(3.98$ excl. VAT)
3.98$
Quantity in stock : 86
RHRP8120

RHRP8120

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
RHRP8120
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
RHRP8120
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 498
RHRP860

RHRP860

Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. V...
RHRP860
Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Spec info: Ifsm 100App (60Hz). Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
RHRP860
Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Spec info: Ifsm 100App (60Hz). Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
Quantity in stock : 4
RL4Z

RL4Z

Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5....
RL4Z
Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V
RL4Z
Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V
Set of 1
2.49$ VAT incl.
(2.49$ excl. VAT)
2.49$
Quantity in stock : 173
RS2A

RS2A

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2A
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2A
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 139
RS2B

RS2B

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2B
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2B
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 191
RS2D

RS2D

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2D
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2D
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 92
RS2G

RS2G

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2G
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2G
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$

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