Standard and Rectifier Diodes

Note: SONY TV

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. VRRM: 350V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Fast switching, Fast recovery diode. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFMS 100Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 530V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Number of terminals: 3. RoHS: yes. Spec info: Silicon epitaxial planer. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). VRRM: 70V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V

Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 1000V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 200V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 0.5A. IFSM: 20A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). VRRM: 2000V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 200V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Spec info: Ifsm--200Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Spec info: Ifsm 100App (60Hz). Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V