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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
1...141516 1718...21
Quantity in stock : 99
RGP15J

RGP15J

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15J
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V
RGP15J
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V
Set of 1
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$
Quantity in stock : 41
RGP15M

RGP15M

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
Set of 1
0.76$ VAT incl.
(0.76$ excl. VAT)
0.76$
Quantity in stock : 49
RGP20B

RGP20B

Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. ...
RGP20B
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 100V. Note: GI, S
RGP20B
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 100V. Note: GI, S
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 28
RGP20D

RGP20D

Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. ...
RGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S
RGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 12
RGP30G

RGP30G

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125A/PP. VRRM: 400V. Note: GI, S...
RGP30G
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125A/PP. VRRM: 400V. Note: GI, S
RGP30G
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125A/PP. VRRM: 400V. Note: GI, S
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 57
RGP30M

RGP30M

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: ...
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 2
RH2F

RH2F

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor mate...
RH2F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 1A. IFSM: 60A. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1500V
RH2F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 1A. IFSM: 60A. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1500V
Set of 1
4.10$ VAT incl.
(4.10$ excl. VAT)
4.10$
Quantity in stock : 2
RH4F

RH4F

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor mate...
RH4F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 2.5A. IFSM: 50A. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1500V
RH4F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 2.5A. IFSM: 50A. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1500V
Set of 1
4.66$ VAT incl.
(4.66$ excl. VAT)
4.66$
Quantity in stock : 28
RHRP15120

RHRP15120

Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semico...
RHRP15120
Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Forward current (AV): 15A. IFSM: 200A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm--200Ap
RHRP15120
Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Forward current (AV): 15A. IFSM: 200A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm--200Ap
Set of 1
3.45$ VAT incl.
(3.45$ excl. VAT)
3.45$
Quantity in stock : 243
RHRP1560

RHRP1560

Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semico...
RHRP1560
Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 15A. IFSM: 30A. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm--200Ap (1 Phase, 60Hz)
RHRP1560
Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 15A. IFSM: 30A. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm--200Ap (1 Phase, 60Hz)
Set of 1
3.14$ VAT incl.
(3.14$ excl. VAT)
3.14$
Quantity in stock : 78
RHRP30120

RHRP30120

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor ma...
RHRP30120
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 30A. IFSM: 300A. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V
RHRP30120
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 30A. IFSM: 300A. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V
Set of 1
3.98$ VAT incl.
(3.98$ excl. VAT)
3.98$
Quantity in stock : 124
RHRP8120

RHRP8120

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semico...
RHRP8120
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm 100Ap (1 Phase, 60Hz)
RHRP8120
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm 100Ap (1 Phase, 60Hz)
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 506
RHRP860

RHRP860

RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35...
RHRP860
RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Forward current (AV): 8A. IFSM: 16A. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm 100App (60Hz)
RHRP860
RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Forward current (AV): 8A. IFSM: 16A. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm 100App (60Hz)
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
Quantity in stock : 4
RL4Z

RL4Z

Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3.5A. IFSM: 80A. Pit...
RL4Z
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3.5A. IFSM: 80A. Pitch: 8x6.5mm. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Note: Ultra-Fast Recovery Rectifier Diode
RL4Z
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3.5A. IFSM: 80A. Pitch: 8x6.5mm. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Note: Ultra-Fast Recovery Rectifier Diode
Set of 1
2.49$ VAT incl.
(2.49$ excl. VAT)
2.49$
Quantity in stock : 173
RS2A

RS2A

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V
RS2A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 139
RS2B

RS2B

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2B
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 100V
RS2B
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 100V
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 191
RS2D

RS2D

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2D
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V
RS2D
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 100
RS2G

RS2G

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2G
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V
RS2G
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 174
RS2J

RS2J

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor m...
RS2J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V
RS2J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 79
RS2K

RS2K

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor m...
RS2K
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V
RS2K
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 83
RS2M

RS2M

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor m...
RS2M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V
RS2M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 22
RURG80100

RURG80100

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor m...
RURG80100
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 500A. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Spec info: Ifsm--500App 60Hz. Function: Ultrafast Diode
RURG80100
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 500A. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Spec info: Ifsm--500App 60Hz. Function: Ultrafast Diode
Set of 1
8.69$ VAT incl.
(8.69$ excl. VAT)
8.69$
Quantity in stock : 238
RURP3060

RURP3060

RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semic...
RURP3060
RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Forward current (AV): 30A. IFSM: 325A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: pinout--1
RURP3060
RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Forward current (AV): 30A. IFSM: 325A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: pinout--1
Set of 1
2.83$ VAT incl.
(2.83$ excl. VAT)
2.83$
Quantity in stock : 517
S16C40C

S16C40C

Conditioning: plastic tube. Dielectric structure: common cathode. Double: Double. Semiconductor mate...
S16C40C
Conditioning: plastic tube. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 16A. IFSM: 150A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: Ifsm 150A/10ms. Conditioning unit: 50. Note: dual silicon diode
S16C40C
Conditioning: plastic tube. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 16A. IFSM: 150A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: Ifsm 150A/10ms. Conditioning unit: 50. Note: dual silicon diode
Set of 1
0.74$ VAT incl.
(0.74$ excl. VAT)
0.74$
Quantity in stock : 6461
S1M-FAI

S1M-FAI

Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semico...
S1M-FAI
Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Forward current (AV): 1A. IFSM: 30A. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--30Ap t=10mS
S1M-FAI
Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Forward current (AV): 1A. IFSM: 30A. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--30Ap t=10mS
Set of 10
1.18$ VAT incl.
(1.18$ excl. VAT)
1.18$
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