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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

528 products available
Products per page :
1...141516 1718...22
Quantity in stock : 12
R2M

R2M

Note: SONY TV...
R2M
Note: SONY TV
R2M
Note: SONY TV
Set of 1
1.06$ VAT incl.
(1.06$ excl. VAT)
1.06$
Quantity in stock : 47
RF2001T3D

RF2001T3D

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: commo...
RF2001T3D
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 100A. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Threshold voltage Vf (max): 1.3V. VRRM: 350V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap
RF2001T3D
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 100A. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Threshold voltage Vf (max): 1.3V. VRRM: 350V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap
Set of 1
1.74$ VAT incl.
(1.74$ excl. VAT)
1.74$
Quantity in stock : 6
RFU20TM5S

RFU20TM5S

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor ma...
RFU20TM5S
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 20A. IFSM: 100A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V. VRRM: 530V. Spec info: Silicon epitaxial planer
RFU20TM5S
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 20A. IFSM: 100A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V. VRRM: 530V. Spec info: Silicon epitaxial planer
Set of 1
4.33$ VAT incl.
(4.33$ excl. VAT)
4.33$
Quantity in stock : 32
RG2Y

RG2Y

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor m...
RG2Y
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Forward current (AV): 1.5A. IFSM: 50A. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. VRRM: 70V. Spec info: IFMS 50Ap
RG2Y
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Forward current (AV): 1.5A. IFSM: 50A. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. VRRM: 70V. Spec info: IFMS 50Ap
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 590
RG4A

RG4A

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor ma...
RG4A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V. VRRM: 600V
RG4A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V. VRRM: 600V
Set of 1
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 53
RG4C

RG4C

Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fas...
RG4C
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 60A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 1000V
RG4C
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 60A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 1000V
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$
Quantity in stock : 67
RG4Z

RG4Z

Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fas...
RG4Z
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 3A. IFSM: 80A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 200V
RG4Z
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 3A. IFSM: 80A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 200V
Set of 1
2.22$ VAT incl.
(2.22$ excl. VAT)
2.22$
Quantity in stock : 5272
RGP02-20E

RGP02-20E

Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semico...
RGP02-20E
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 0.5A. IFSM: 20A. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V. VRRM: 2000V. Spec info: IFSM--20Ap t=8.3mS
RGP02-20E
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 0.5A. IFSM: 20A. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V. VRRM: 2000V. Spec info: IFSM--20Ap t=8.3mS
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 195
RGP10D

RGP10D

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
RGP10D
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10D
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 66
RGP10G

RGP10G

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
RGP10G
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS
RGP10G
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$
Quantity in stock : 737
RGP10J

RGP10J

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semic...
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 18
RGP15G

RGP15G

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15G
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V
RGP15G
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 99
RGP15J

RGP15J

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15J
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V
RGP15J
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V
Set of 1
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$
Quantity in stock : 41
RGP15M

RGP15M

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
Set of 1
0.76$ VAT incl.
(0.76$ excl. VAT)
0.76$
Quantity in stock : 49
RGP20B

RGP20B

Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. ...
RGP20B
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 100V. Note: GI, S
RGP20B
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 100V. Note: GI, S
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 28
RGP20D

RGP20D

Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. ...
RGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S
RGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 12
RGP30G

RGP30G

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125A/PP. VRRM: 400V. Note: GI, S...
RGP30G
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125A/PP. VRRM: 400V. Note: GI, S
RGP30G
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125A/PP. VRRM: 400V. Note: GI, S
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 57
RGP30M

RGP30M

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: ...
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 2
RH2F

RH2F

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor mate...
RH2F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 1A. IFSM: 60A. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1500V
RH2F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 1A. IFSM: 60A. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1500V
Set of 1
4.10$ VAT incl.
(4.10$ excl. VAT)
4.10$
Quantity in stock : 2
RH4F

RH4F

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor mate...
RH4F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 2.5A. IFSM: 50A. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1500V
RH4F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 2.5A. IFSM: 50A. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1500V
Set of 1
4.66$ VAT incl.
(4.66$ excl. VAT)
4.66$
Quantity in stock : 16
RHRP15120

RHRP15120

Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semico...
RHRP15120
Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Forward current (AV): 15A. IFSM: 200A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm--200Ap
RHRP15120
Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Forward current (AV): 15A. IFSM: 200A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm--200Ap
Set of 1
3.45$ VAT incl.
(3.45$ excl. VAT)
3.45$
Quantity in stock : 243
RHRP1560

RHRP1560

Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semico...
RHRP1560
Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 15A. IFSM: 30A. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm--200Ap (1 Phase, 60Hz)
RHRP1560
Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 15A. IFSM: 30A. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm--200Ap (1 Phase, 60Hz)
Set of 1
3.14$ VAT incl.
(3.14$ excl. VAT)
3.14$
Quantity in stock : 65
RHRP30120

RHRP30120

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor ma...
RHRP30120
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 30A. IFSM: 300A. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V
RHRP30120
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Forward current (AV): 30A. IFSM: 300A. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V
Set of 1
3.98$ VAT incl.
(3.98$ excl. VAT)
3.98$
Quantity in stock : 96
RHRP8120

RHRP8120

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semico...
RHRP8120
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm 100Ap (1 Phase, 60Hz)
RHRP8120
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V. VRRM: 1200V. Spec info: Ifsm 100Ap (1 Phase, 60Hz)
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 503
RHRP860

RHRP860

RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35...
RHRP860
RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Forward current (AV): 8A. IFSM: 16A. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm 100App (60Hz)
RHRP860
RoHS: yes. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Forward current (AV): 8A. IFSM: 16A. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifsm 100App (60Hz)
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
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