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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

511 products available
Products per page :
Quantity in stock : 12
RGP30G

RGP30G

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S...
RGP30G
Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S
RGP30G
Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 57
RGP30M

RGP30M

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V....
RGP30M
Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting
RGP30M
Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 2
RH2F

RH2F

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4....
RH2F
Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
RH2F
Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
4.10$ VAT incl.
(4.10$ excl. VAT)
4.10$
Quantity in stock : 2
RH4F

RH4F

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( ...
RH4F
Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V
RH4F
Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V
Set of 1
4.66$ VAT incl.
(4.66$ excl. VAT)
4.66$
Out of stock
RHRP15120

RHRP15120

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-...
RHRP15120
Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
RHRP15120
Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
Set of 1
3.45$ VAT incl.
(3.45$ excl. VAT)
3.45$
Quantity in stock : 238
RHRP1560

RHRP1560

Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
RHRP1560
Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Spec info: Ifsm--200Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
RHRP1560
Forward current (AV): 15A. IFSM: 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Note: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Spec info: Ifsm--200Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
Set of 1
2.37$ VAT incl.
(2.37$ excl. VAT)
2.37$
Quantity in stock : 1875210
RHRP30120

RHRP30120

Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC....
RHRP30120
Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
RHRP30120
Forward current (AV): 30A. IFSM: 300A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast with Soft Recovery. Marking on the case: RHR30120. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
Set of 1
3.98$ VAT incl.
(3.98$ excl. VAT)
3.98$
Quantity in stock : 86
RHRP8120

RHRP8120

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
RHRP8120
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
RHRP8120
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 498
RHRP860

RHRP860

Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. V...
RHRP860
Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: Ifsm 100App (60Hz). Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
RHRP860
Forward current (AV): 8A. IFSM: 16A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35us. Semiconductor material: silicon. Function: Hyper fast Diode. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: Ifsm 100App (60Hz). Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.1V. Forward voltage Vf (min): 1.7V
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
Quantity in stock : 4
RL4Z

RL4Z

Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5....
RL4Z
Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V
RL4Z
Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V
Set of 1
2.49$ VAT incl.
(2.49$ excl. VAT)
2.49$
Quantity in stock : 173
RS2A

RS2A

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2A
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2A
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 139
RS2B

RS2B

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2B
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2B
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 191
RS2D

RS2D

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2D
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2D
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 92
RS2G

RS2G

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2G
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2G
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 174
RS2J

RS2J

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2J
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2J
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 79
RS2K

RS2K

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2K
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2K
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 74
RS2M

RS2M

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
RS2M
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
RS2M
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 22
RURG80100

RURG80100

Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2....
RURG80100
Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Function: Ultrafast Diode. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--500App 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V
RURG80100
Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Function: Ultrafast Diode. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--500App 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V
Set of 1
8.69$ VAT incl.
(8.69$ excl. VAT)
8.69$
Quantity in stock : 237
RURP3060

RURP3060

Forward current (AV): 30A. IFSM: 325A. Housing: TO-220. Housing (according to data sheet): TO-220AC....
RURP3060
Forward current (AV): 30A. IFSM: 325A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Number of terminals: 2. RoHS: yes. Spec info: pinout--1. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V
RURP3060
Forward current (AV): 30A. IFSM: 325A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Number of terminals: 2. RoHS: yes. Spec info: pinout--1. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V
Set of 1
2.83$ VAT incl.
(2.83$ excl. VAT)
2.83$
Quantity in stock : 517
S16C40C

S16C40C

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB....
S16C40C
Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Note: Ifsm 150A/10ms. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V
S16C40C
Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Note: Ifsm 150A/10ms. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V
Set of 1
0.74$ VAT incl.
(0.74$ excl. VAT)
0.74$
Quantity in stock : 6435
S1M-FAI

S1M-FAI

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC...
S1M-FAI
Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 1000V. Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
S1M-FAI
Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 1000V. Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 10
1.18$ VAT incl.
(1.18$ excl. VAT)
1.18$
Quantity in stock : 20
S2L20U

S2L20U

Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon...
S2L20U
Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon
S2L20U
Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon
Set of 1
3.46$ VAT incl.
(3.46$ excl. VAT)
3.46$
Quantity in stock : 5829
S2M

S2M

RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Ho...
S2M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 55A. Forward voltage Vfmax (V): 1.15V @ 2A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..100uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
S2M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 55A. Forward voltage Vfmax (V): 1.15V @ 2A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..100uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 5
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 61
S399D

S399D

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass...
S399D
Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Semiconductor material: silicon. Note: 4.2x4.3mm. Note: 50App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
S399D
Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Semiconductor material: silicon. Note: 4.2x4.3mm. Note: 50App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 7400
S3M

S3M

RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Ho...
S3M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMC. Housing (JEDEC standard): DO-214AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Forward voltage Vfmax (V): 1.15V @ 3A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..200uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
S3M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMC. Housing (JEDEC standard): DO-214AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Forward voltage Vfmax (V): 1.15V @ 3A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..200uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C
Set of 1
0.14$ VAT incl.
(0.14$ excl. VAT)
0.14$

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