Standard and Rectifier Diodes

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Function: Ultrafast Diode. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--500App 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V

Forward current (AV): 30A. IFSM: 325A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Number of terminals: 2. Spec info: pinout--1. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Note: Ifsm 150A/10ms. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V

VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: SMD. Reverse Leakage Current: <50uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S1

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 1000V. Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 100V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S2

Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon

Housing: yes. VRRM: 1000V. Average Rectified Current per Diode: 2A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1.15V @ 2A. Series: S2. MSL: 5uA..100uA

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Semiconductor material: silicon. Note: 4.2x4.3mm. Note: 50App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Housing: yes. VRRM: 1000V. Average Rectified Current per Diode: 3A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 3A. Mounting Type: SMD. Reverse Leakage Current: <200uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1.15V @ 3A. Series: S3. MSL: 5uA..200uA

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: rectifier diode. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.15V

Forward current (AV): 5A. IFSM: 180A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 7.2x5.8x2.2mm ). VRRM: 1000V. Cj: 80pF. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: 50/60 Hz Mains Rectification. MRI (max): 250uA. MRI (min): 10uA. Marking on the case: S5M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 100V. Housing: DO15. Average Rectified Current per Diode: 1A. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.79V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 100V. Reverse Recovery Time (Max): 0.5mA. Information: 2. Series: SB1. MSL: n/a

Housing: DO15. VRRM: 20V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 20V. Series: SB1. MSL: n/a

Housing: DO15. VRRM: 30V. Average Rectified Current per Diode: 1A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 30V. Series: SB1. MSL: n/a

Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 40V. Housing: DO15. Average Rectified Current per Diode: 1A. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.50V / 1A. Mounting Type: THT. Reverse Leakage Current: 500uA / 40V. Reverse Recovery Time (Max): 0.5mA. Information: 2. Series: SB1. MSL: n/a

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 60V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): PCB soldering. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 100V. Semiconductor material: Sb. Note: Schottky rectifier diode. Note: IFSM--50Ap/10mS. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.79V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 15A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky diode. Note: Total IF(AV) 2ch 30A. Number of terminals: 3. RoHS: yes. Spec info: Ifsm--275A t=8.3ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap 50Hz 8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.79V. Trr Diode (Min.): independent