Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: rectifier diode. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.15V

Forward current (AV): 5A. IFSM: 180A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 7.2x5.8x2.2mm ). VRRM: 1000V. Cj: 80pF. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: 50/60 Hz Mains Rectification. MRI (max): 250uA. MRI (min): 10uA. Marking on the case: S5M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V

Housing: DO15. Diode type: Schottky rectifier diode. Assembly/installation: THT. Max reverse voltage: 30V. Driving current: 1A. Capacity: 110pF. Semiconductor structure: diode. Pulse current max.: 40A

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): PCB soldering. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40Ap T=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 100V. Semiconductor material: Sb. Note: Schottky rectifier diode. Note: IFSM--50Ap/10mS. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.79V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 15A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky diode. Note: Total IF(AV) 2ch 30A. Number of terminals: 3. RoHS: yes. Spec info: Ifsm--275A t=8.3ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap 50Hz 8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.79V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). VRRM: 200V. Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 0.001mA. Marking on the case: SB3200. Equivalents: Vishay--VSB3200. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap 50Hz 8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.68V

Housing: DO201. Assembly/installation: THT. Max reverse voltage: 40V. Conditioning: Ammo Pack

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap 50Hz 8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.79V

RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): Schottky rectifier diode. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 5A. Ifsm [A]: 310A. Forward voltage Vfmax (V): 0.79V @ 5A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 0.6mA. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 150V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 50mA. MRI (min): 8uA. Number of terminals: 2. RoHS: yes. Spec info: 125Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.92V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 200V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 0.5mA. MRI (min): 0.1mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.9V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.67V

RoHS: yes. Component family: dual Schottky rectifier diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Forward current [A]: 2x10A. Ifsm [A]: 110A. Forward voltage Vfmax (V): 0.85V @ 10A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 300uA..7mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Forward current (AV): 30A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Cj: 700pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Note: SMPS DIODE. Note: dual silicon diode. Note: Ifsm--275A/8.3mS 60Hz. Number of terminals: 3. Spec info: Schottky rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 30A. IFSM: 300A. Housing: P-600. Housing (according to data sheet): P600 ( 8x7.5mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 10mA. MRI (min): 0.3mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap T=10mS 50Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.42V. Forward voltage Vf (min): 0.25V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Note: GI, S. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 200V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--75App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--75App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V