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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

528 products available
Products per page :
1...151617 1819...22
Quantity in stock : 3231
RL207

RL207

Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon...
RL207
Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifier. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: Ifsm--70Ap t=8.3mS
RL207
Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifier. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: Ifsm--70Ap t=8.3mS
Set of 10
0.81$ VAT incl.
(0.81$ excl. VAT)
0.81$
Quantity in stock : 4
RL4Z

RL4Z

Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3.5A. IFSM: 80A. Pit...
RL4Z
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3.5A. IFSM: 80A. Pitch: 8x6.5mm. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Note: Ultra-Fast Recovery Rectifier Diode
RL4Z
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3.5A. IFSM: 80A. Pitch: 8x6.5mm. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Note: Ultra-Fast Recovery Rectifier Diode
Set of 1
2.49$ VAT incl.
(2.49$ excl. VAT)
2.49$
Quantity in stock : 173
RS2A

RS2A

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V
RS2A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 139
RS2B

RS2B

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2B
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 100V
RS2B
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 100V
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 191
RS2D

RS2D

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2D
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V
RS2D
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 92
RS2G

RS2G

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor m...
RS2G
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V
RS2G
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 174
RS2J

RS2J

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor m...
RS2J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V
RS2J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 79
RS2K

RS2K

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor m...
RS2K
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V
RS2K
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 78
RS2M

RS2M

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor m...
RS2M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V
RS2M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 22
RURG80100

RURG80100

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor m...
RURG80100
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 500A. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Spec info: Ifsm--500App 60Hz. Function: Ultrafast Diode
RURG80100
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 500A. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247-2. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Spec info: Ifsm--500App 60Hz. Function: Ultrafast Diode
Set of 1
8.69$ VAT incl.
(8.69$ excl. VAT)
8.69$
Quantity in stock : 238
RURP3060

RURP3060

RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semic...
RURP3060
RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Forward current (AV): 30A. IFSM: 325A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: pinout--1
RURP3060
RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Diode. Forward current (AV): 30A. IFSM: 325A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: pinout--1
Set of 1
2.83$ VAT incl.
(2.83$ excl. VAT)
2.83$
Quantity in stock : 517
S16C40C

S16C40C

Conditioning: plastic tube. Dielectric structure: common cathode. Double: Double. Semiconductor mate...
S16C40C
Conditioning: plastic tube. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 16A. IFSM: 150A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: Ifsm 150A/10ms. Conditioning unit: 50. Note: dual silicon diode
S16C40C
Conditioning: plastic tube. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 16A. IFSM: 150A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: Ifsm 150A/10ms. Conditioning unit: 50. Note: dual silicon diode
Set of 1
0.74$ VAT incl.
(0.74$ excl. VAT)
0.74$
Quantity in stock : 6440
S1M-FAI

S1M-FAI

Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semico...
S1M-FAI
Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Forward current (AV): 1A. IFSM: 30A. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--30Ap t=10mS
S1M-FAI
Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Forward current (AV): 1A. IFSM: 30A. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--30Ap t=10mS
Set of 10
1.18$ VAT incl.
(1.18$ excl. VAT)
1.18$
Quantity in stock : 20
S2L20U

S2L20U

Semiconductor material: silicon. Forward current (AV): 1.5A. VRRM: 200V...
S2L20U
Semiconductor material: silicon. Forward current (AV): 1.5A. VRRM: 200V
S2L20U
Semiconductor material: silicon. Forward current (AV): 1.5A. VRRM: 200V
Set of 1
3.46$ VAT incl.
(3.46$ excl. VAT)
3.46$
Quantity in stock : 5829
S2M

S2M

RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Ho...
S2M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 55A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..100uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 1.15V @ 2A
S2M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 55A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..100uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 1.15V @ 2A
Set of 5
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 61
S399D

S399D

Semiconductor material: silicon. Forward current (AV): 3A. Note: 4.2x4.3mm. Note: 50App/10ms. Number...
S399D
Semiconductor material: silicon. Forward current (AV): 3A. Note: 4.2x4.3mm. Note: 50App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V
S399D
Semiconductor material: silicon. Forward current (AV): 3A. Note: 4.2x4.3mm. Note: 50App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 7400
S3M

S3M

RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Ho...
S3M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMC. Housing (JEDEC standard): DO-214AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..200uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 1.15V @ 3A
S3M
RoHS: yes. Component family: Surface mounted rectifier diode (SMD). Housing: PCB soldering (SMD). Housing: SMC. Housing (JEDEC standard): DO-214AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..200uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 1.15V @ 3A
Set of 1
0.14$ VAT incl.
(0.14$ excl. VAT)
0.14$
Quantity in stock : 219
S3MB-13-F

S3MB-13-F

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function...
S3MB-13-F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: rectifier diode. Forward current (AV): 3A. IFSM: 100A. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.15V. VRRM: 1000V. Spec info: Ifsm 100Ap (t=8.3ms)
S3MB-13-F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: rectifier diode. Forward current (AV): 3A. IFSM: 100A. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.15V. VRRM: 1000V. Spec info: Ifsm 100Ap (t=8.3ms)
Set of 1
0.48$ VAT incl.
(0.48$ excl. VAT)
0.48$
Quantity in stock : 227
S5M

S5M

Cj: 80pF. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: 50/60 Hz Mains Recti...
S5M
Cj: 80pF. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: 50/60 Hz Mains Rectification. Forward current (AV): 5A. IFSM: 180A. MRI (max): 250uA. MRI (min): 10uA. Marking on the case: S5M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 7.2x5.8x2.2mm ). Operating temperature: -50...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
S5M
Cj: 80pF. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: 50/60 Hz Mains Rectification. Forward current (AV): 5A. IFSM: 180A. MRI (max): 250uA. MRI (min): 10uA. Marking on the case: S5M. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 7.2x5.8x2.2mm ). Operating temperature: -50...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 180
SB1100

SB1100

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode....
SB1100
Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
SB1100
Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
Set of 5
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 350
SB130

SB130

Housing: DO15. Diode type: Schottky rectifier diode. Assembly/installation: THT. Max reverse voltage...
SB130
Housing: DO15. Diode type: Schottky rectifier diode. Assembly/installation: THT. Max reverse voltage: 30V. Driving current: 1A. Capacity: 110pF. Semiconductor structure: diode. Pulse current max.: 40A
SB130
Housing: DO15. Diode type: Schottky rectifier diode. Assembly/installation: THT. Max reverse voltage: 30V. Driving current: 1A. Capacity: 110pF. Semiconductor structure: diode. Pulse current max.: 40A
Set of 10
1.51$ VAT incl.
(1.51$ excl. VAT)
1.51$
Quantity in stock : 5284
SB140

SB140

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode....
SB140
Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
SB140
Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
Set of 10
1.39$ VAT incl.
(1.39$ excl. VAT)
1.39$
Quantity in stock : 2513
SB160

SB160

Dielectric structure: Anode-Cathode. Trr Diode (Min.): PCB soldering. Semiconductor material: Sb. Fu...
SB160
Dielectric structure: Anode-Cathode. Trr Diode (Min.): PCB soldering. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
SB160
Dielectric structure: Anode-Cathode. Trr Diode (Min.): PCB soldering. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
Set of 10
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$
Quantity in stock : 55
SB190

SB190

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode....
SB190
Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 90V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
SB190
Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 40A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 90V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--40Ap T=8.3mS
Set of 10
1.62$ VAT incl.
(1.62$ excl. VAT)
1.62$
Quantity in stock : 662
SB2100

SB2100

Semiconductor material: Sb. Forward current (AV): 2A. IFSM: 50A. MRI (max): 5mA. MRI (min): 0.5mA. S...
SB2100
Semiconductor material: Sb. Forward current (AV): 2A. IFSM: 50A. MRI (max): 5mA. MRI (min): 0.5mA. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). Threshold voltage Vf (max): 0.79V. VRRM: 100V. Number of terminals: 2. Note: Schottky rectifier diode. Note: IFSM--50Ap/10mS
SB2100
Semiconductor material: Sb. Forward current (AV): 2A. IFSM: 50A. MRI (max): 5mA. MRI (min): 0.5mA. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 6.3x3.0mm ). Threshold voltage Vf (max): 0.79V. VRRM: 100V. Number of terminals: 2. Note: Schottky rectifier diode. Note: IFSM--50Ap/10mS
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
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