langue
Electronic components and equipment, for businesses and individuals
0
Product categories :
Audio
>
312
Automation
>
19
Cables
>
1777
Computer
>
59
Connectors
>
5694
Cooling
>
764
Electrical protection
>
1160
Enclosures for electronics
>
1218
Energy
>
1358
Leisure electronics
>
542
Mechanical parts
>
445
Optoelectronics
>
2023
Passive components
>
14526
Relays
>
871
Repairing
>
2258
Semiconductors
>
14642
Switches
>
952
Tools
>
1406
Transformers
>
566
Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
1...181920 21
Quantity in stock : 23
STTA506F

STTA506F

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor ma...
STTA506F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Ultra-fast diode. Forward current (AV): 5A. IFSM: 55A. MRI (max): 0.75mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): ISOWATT TO-220AC. Operating temperature: -...+150°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.25V. VRRM: 600V. Spec info: Ifsm--55Ap (t=10ms)
STTA506F
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Ultra-fast diode. Forward current (AV): 5A. IFSM: 55A. MRI (max): 0.75mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): ISOWATT TO-220AC. Operating temperature: -...+150°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.25V. VRRM: 600V. Spec info: Ifsm--55Ap (t=10ms)
Set of 1
2.37$ VAT incl.
(2.37$ excl. VAT)
2.37$
Quantity in stock : 8
STTA512D

STTA512D

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 45 ns. Semiconductor ma...
STTA512D
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 45 ns. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 45A. MRI (max): 0.3mA. MRI (min): 100uA. Number of terminals: 2. Temperature: +150°C. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.2V. Forward voltage Vf (min): 1.35V. VRRM: 1200V. Spec info: IFSM--45Ap. Function: Ultra-fast Diode, High Voltage
STTA512D
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 45 ns. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 45A. MRI (max): 0.3mA. MRI (min): 100uA. Number of terminals: 2. Temperature: +150°C. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.2V. Forward voltage Vf (min): 1.35V. VRRM: 1200V. Spec info: IFSM--45Ap. Function: Ultra-fast Diode, High Voltage
Set of 1
2.75$ VAT incl.
(2.75$ excl. VAT)
2.75$
Quantity in stock : 191
STTH1210D

STTH1210D

RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 48 ns. Semic...
STTH1210D
RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 48 ns. Semiconductor material: silicon. Function: Ultrafast recovery - high voltage diode. Forward current (AV): 12A. IFSM: 80A. Marking on the case: STTH1210D. Number of terminals: 2. Temperature: +175°C. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--80Ap T=10ms
STTH1210D
RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 48 ns. Semiconductor material: silicon. Function: Ultrafast recovery - high voltage diode. Forward current (AV): 12A. IFSM: 80A. Marking on the case: STTH1210D. Number of terminals: 2. Temperature: +175°C. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--80Ap T=10ms
Set of 1
2.04$ VAT incl.
(2.04$ excl. VAT)
2.04$
Quantity in stock : 9
STTH20003TV1

STTH20003TV1

Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode...
STTH20003TV1
Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Forward current (AV): 2x100A. IFSM: 100A. MRI (max): 2mA. MRI (min): 200uA. Number of terminals: 4. RoHS: yes. Assembly/installation: screw. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.8V. VRRM: 300V. Spec info: IFSM--diode/100Ap t=10ms, TVJ=150°C. Function: Dual Ultrafast high voltage rectifier diode
STTH20003TV1
Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Forward current (AV): 2x100A. IFSM: 100A. MRI (max): 2mA. MRI (min): 200uA. Number of terminals: 4. RoHS: yes. Assembly/installation: screw. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.8V. VRRM: 300V. Spec info: IFSM--diode/100Ap t=10ms, TVJ=150°C. Function: Dual Ultrafast high voltage rectifier diode
Set of 1
33.50$ VAT incl.
(33.50$ excl. VAT)
33.50$
Quantity in stock : 64
STTH2003CFP

STTH2003CFP

Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor ma...
STTH2003CFP
Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 10A. IFSM: 110A. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V. VRRM: 300V. Spec info: Ifsm 110A t=10ms
STTH2003CFP
Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 10A. IFSM: 110A. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V. VRRM: 300V. Spec info: Ifsm 110A t=10ms
Set of 1
3.31$ VAT incl.
(3.31$ excl. VAT)
3.31$
Quantity in stock : 47
STTH2003CG

STTH2003CG

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor m...
STTH2003CG
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 10A. IFSM: 110A. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V. VRRM: 300V. Spec info: Ifsm 110A t=10ms
STTH2003CG
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 10A. IFSM: 110A. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V. VRRM: 300V. Spec info: Ifsm 110A t=10ms
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$
Quantity in stock : 50
STTH2003CT

STTH2003CT

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor m...
STTH2003CT
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 10A. IFSM: 110A. MRI (max): 300uA. MRI (min): 20uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V. VRRM: 300V. Spec info: Ifsm 110A t=10ms
STTH2003CT
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 10A. IFSM: 110A. MRI (max): 300uA. MRI (min): 20uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V. VRRM: 300V. Spec info: Ifsm 110A t=10ms
Set of 1
4.23$ VAT incl.
(4.23$ excl. VAT)
4.23$
Quantity in stock : 1843
STTH2R06

STTH2R06

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor ma...
STTH2R06
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: AXIAL TURBO 2 DIODE. Production date: 201506. Forward current (AV): 2A. IFSM: 40A. MRI (max): 12uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -40...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 600V. Spec info: IFSM--40App, t=10mS
STTH2R06
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: AXIAL TURBO 2 DIODE. Production date: 201506. Forward current (AV): 2A. IFSM: 40A. MRI (max): 12uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -40...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 600V. Spec info: IFSM--40App, t=10mS
Set of 1
0.43$ VAT incl.
(0.43$ excl. VAT)
0.43$
Quantity in stock : 6
STTH3010W

STTH3010W

Note: 2500V insulation. Note: 300Ap/5ms, 180Ap/10ms. Housing: DO-247. Housing (according to data she...
STTH3010W
Note: 2500V insulation. Note: 300Ap/5ms, 180Ap/10ms. Housing: DO-247. Housing (according to data sheet): DO-247. Note: high voltage diode, ultra-fast recovery
STTH3010W
Note: 2500V insulation. Note: 300Ap/5ms, 180Ap/10ms. Housing: DO-247. Housing (according to data sheet): DO-247. Note: high voltage diode, ultra-fast recovery
Set of 1
7.27$ VAT incl.
(7.27$ excl. VAT)
7.27$
Quantity in stock : 122
STTH30R03CG

STTH30R03CG

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor m...
STTH30R03CG
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 15A. IFSM: 60.4k Ohms. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V. VRRM: 300V. Spec info: Ifsm 120Ap tp=10ms
STTH30R03CG
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 15A. IFSM: 60.4k Ohms. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V. VRRM: 300V. Spec info: Ifsm 120Ap tp=10ms
Set of 1
4.96$ VAT incl.
(4.96$ excl. VAT)
4.96$
Quantity in stock : 12
STTH30R06CW

STTH30R06CW

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor m...
STTH30R06CW
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 15A. IFSM: 60.4k Ohms. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: Ifsm 120Ap t=10mS
STTH30R06CW
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 15A. IFSM: 60.4k Ohms. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: Ifsm 120Ap t=10mS
Set of 1
9.61$ VAT incl.
(9.61$ excl. VAT)
9.61$
Quantity in stock : 30
STTH30R06W

STTH30R06W

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor ma...
STTH30R06W
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 30A. IFSM: 300A. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: IFSM--300Ap
STTH30R06W
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 30A. IFSM: 300A. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: IFSM--300Ap
Set of 1
4.86$ VAT incl.
(4.86$ excl. VAT)
4.86$
Quantity in stock : 82
STTH6002CW

STTH6002CW

RoHS: yes. Housing: TO-247. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (M...
STTH6002CW
RoHS: yes. Housing: TO-247. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 22 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 60A. IFSM: 330A. Number of terminals: 3. Temperature: +175°C. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Operating temperature: +175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.75V. VRRM: 200V. Spec info: Ifsm--330Ap t=10mS
STTH6002CW
RoHS: yes. Housing: TO-247. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 22 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 60A. IFSM: 330A. Number of terminals: 3. Temperature: +175°C. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Operating temperature: +175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.75V. VRRM: 200V. Spec info: Ifsm--330Ap t=10mS
Set of 1
7.08$ VAT incl.
(7.08$ excl. VAT)
7.08$
Quantity in stock : 21
STTH802FP

STTH802FP

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconduc...
STTH802FP
Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Marking on the case: STTH802. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.8V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Function: ultra-fast rectifier diodes (min 17ns, max 30ns). Conditioning unit: 50. Spec info: Ifsm 100Ap
STTH802FP
Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. Marking on the case: STTH802. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.8V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Function: ultra-fast rectifier diodes (min 17ns, max 30ns). Conditioning unit: 50. Spec info: Ifsm 100Ap
Set of 1
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$
Quantity in stock : 712
SUF4003

SUF4003

Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor mate...
SUF4003
Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 5000. Spec info: IFSM--27Ap
SUF4003
Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 5000. Spec info: IFSM--27Ap
Set of 10
1.55$ VAT incl.
(1.55$ excl. VAT)
1.55$
Quantity in stock : 1012
SUF4004

SUF4004

Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor mate...
SUF4004
Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 5000. Spec info: IFSM--27Ap
SUF4004
Conditioning: roll. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 5000. Spec info: IFSM--27Ap
Set of 5
0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$
Quantity in stock : 416
SUF4007

SUF4007

Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ...
SUF4007
Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap
SUF4007
Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Forward current (AV): 1A. IFSM: 27A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap
Set of 10
1.53$ VAT incl.
(1.53$ excl. VAT)
1.53$
Quantity in stock : 4131
TMMBAT46

TMMBAT46

Semiconductor material: Sb. Forward current (AV): 0.15A. Schottky diode?: schottky. Assembly/install...
TMMBAT46
Semiconductor material: Sb. Forward current (AV): 0.15A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80. VRRM: 100V. Number of terminals: 2. Note: IFSM 0.75App/10ms
TMMBAT46
Semiconductor material: Sb. Forward current (AV): 0.15A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80. VRRM: 100V. Number of terminals: 2. Note: IFSM 0.75App/10ms
Set of 5
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 26086
TS4148RYG

TS4148RYG

RoHS: yes. Housing: SMD 0805. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Tr...
TS4148RYG
RoHS: yes. Housing: SMD 0805. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Forward current (AV): 150mA. IFSM: 500mA. Other name: IN4148. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 100V. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A
TS4148RYG
RoHS: yes. Housing: SMD 0805. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Forward current (AV): 150mA. IFSM: 500mA. Other name: IN4148. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 100V. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A
Set of 10
0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
Quantity in stock : 150
TSSW3U45

TSSW3U45

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Sch...
TSSW3U45
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). Forward current (AV): 3A. IFSM: 50A. MRI (max): 1mA. Marking on the case: W3U45. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.47V. Forward voltage Vf (min): 0.33V. VRRM: 45V. Number of terminals: 2. Spec info: IFSM--50Ap (tp=8.3ms)
TSSW3U45
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). Forward current (AV): 3A. IFSM: 50A. MRI (max): 1mA. Marking on the case: W3U45. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.47V. Forward voltage Vf (min): 0.33V. VRRM: 45V. Number of terminals: 2. Spec info: IFSM--50Ap (tp=8.3ms)
Set of 1
0.57$ VAT incl.
(0.57$ excl. VAT)
0.57$
Quantity in stock : 188
TSSW3U60

TSSW3U60

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Sch...
TSSW3U60
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). Forward current (AV): 3A. IFSM: 50A. MRI (max): 1mA. Marking on the case: W3U60. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.58V. Forward voltage Vf (min): 0.39V. VRRM: 60V. Number of terminals: 2. Spec info: IFSM--50Ap (tp=8.3ms)
TSSW3U60
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). Forward current (AV): 3A. IFSM: 50A. MRI (max): 1mA. Marking on the case: W3U60. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.58V. Forward voltage Vf (min): 0.39V. VRRM: 60V. Number of terminals: 2. Spec info: IFSM--50Ap (tp=8.3ms)
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 137
TVR06J

TVR06J

Semiconductor material: silicon. Forward current (AV): 0.6A. VRRM: 600V...
TVR06J
Semiconductor material: silicon. Forward current (AV): 0.6A. VRRM: 600V
TVR06J
Semiconductor material: silicon. Forward current (AV): 0.6A. VRRM: 600V
Set of 10
1.68$ VAT incl.
(1.68$ excl. VAT)
1.68$
Quantity in stock : 37
UF108

UF108

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole m...
UF108
Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Number of terminals: 2. Note: GI-S
UF108
Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Number of terminals: 2. Note: GI-S
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 1
UF3002M

UF3002M

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole m...
UF3002M
Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 100V. Number of terminals: 2. Note: GI-S
UF3002M
Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 100V. Number of terminals: 2. Note: GI-S
Set of 1
0.48$ VAT incl.
(0.48$ excl. VAT)
0.48$
Quantity in stock : 4
UF3004M

UF3004M

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole m...
UF3004M
Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 400V. Number of terminals: 2. Note: GI-S
UF3004M
Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 400V. Number of terminals: 2. Note: GI-S
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
1...181920 21

Information and technical help

By phone :
By email
Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.