Standard and Rectifier Diodes

Forward current (AV): 2x100A. IFSM: 100A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP. VRRM: 300V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Function: Dual Ultrafast high voltage rectifier diode. MRI (max): 2mA. MRI (min): 200uA. Number of terminals: 4. RoHS: yes. Spec info: IFSM--diode/100Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.8V

Forward current (AV): 10A. IFSM: 110A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 300V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 110A t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V

Forward current (AV): 10A. IFSM: 110A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). VRRM: 300V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. MRI (max): 300uA. MRI (min): 30uA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 110A t=10ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V

Forward current (AV): 10A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 300V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. MRI (max): 300uA. MRI (min): 20uA. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 110A t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.85V

Forward current (AV): 2A. IFSM: 40A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: AXIAL TURBO 2 DIODE. Production date: 201506. MRI (max): 12uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--40App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Housing: DO-247. Housing (according to data sheet): DO-247. Note: 2500V insulation. Note: high voltage diode, ultra-fast recovery. Note: 300Ap/5ms, 180Ap/10ms

Forward current (AV): 15A. IFSM: 60.4k Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. VRRM: 300V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 120Ap tp=10ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V

Forward current (AV): 15A. IFSM: 60.4k Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. VRRM: 600V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 120Ap t=10mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.1V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: IFSM--300Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.1V

Forward current (AV): 60A. IFSM: 330A. Housing: TO-247. Housing (according to data sheet): TO-247. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 22 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Number of terminals: 3. Temperature: +175°C. RoHS: yes. Spec info: Ifsm--330Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: +175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.75V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diodes (min 17ns, max 30ns). Marking on the case: STTH802. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.8V

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 200V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--27Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 400V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--27Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 1000V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--27Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 0.15A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80. VRRM: 100V. Semiconductor material: Sb. Note: IFSM 0.75App/10ms. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Housing: PCB soldering (SMD). Housing: 063. Forward current [A]: 0.1A. RoHS: yes. Component family: Small-signal diode. Surface mount (SMD). Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 2A. Forward voltage Vfmax (V): 1V @ 100mA. Close voltage (repetitive) Vrrm [V]: 75V. Leakage current on closing Ir [A]: 5uA. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Forward current (AV): 150mA. IFSM: 500mA. Housing: SMD 0805. VRRM: 100V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Other name: IN4148. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). VRRM: 45V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). MRI (max): 1mA. Marking on the case: W3U45. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.47V. Forward voltage Vf (min): 0.33V

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-123. Housing (according to data sheet): SOD123W SMA (2.9x1.9mm). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode with low forward voltage. Surface mount (SMD). MRI (max): 1mA. Marking on the case: W3U60. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.58V. Forward voltage Vf (min): 0.39V

Forward current (AV): 0.6A. VRRM: 600V. Semiconductor material: silicon

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 800V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 100V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 400V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 600V. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Number of terminals: 2. Spec info: Ifsm 150Ap t=8.2ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Semiconductor material: silicon. Note: GI-S. Number of terminals: 2. Assembly/installation: PCB through-hole mounting