Standard and Rectifier Diodes

Cj: 400pF. Dielectric structure: Anode-Cathode. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 150A. Marking on the case: SR5100. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD DO-27 ( 5.2x9mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.85V. VRRM: 100V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap

Cj: 250pF. Semiconductor material: Sb. Forward current (AV): 5A. Forward current (RMS): 120Ap / 8.3ms. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. VRRM: 20V. Number of terminals: 2

Cj: 175pF. Dielectric structure: Anode-Cathode. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 150A. Marking on the case: SR5200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap

Cj: 100pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): SMA. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 1A. IFSM: 30A. MRI (max): 20mA. MRI (min): 1mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.5x2.79mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1

RoHS: yes. Component family: Silicon Schottky rectifier diode. Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 50A. Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 0.4mA..10mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +125°C. Forward voltage Vfmax (V): 0.7V @ 2A

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34B. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AA (SMB) 4.57x3.94mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: IFSM--80Ap (tp=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

Cj: 152pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 12 ns. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. MRI (max): 60mA. MRI (min): 500uA. Marking on the case: 34L. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Note: screen printing/SMD code 34L. Housing (according to data sheet): 425AB SMA (3.8x1.9mm). Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: IFSM--80Ap (tp=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Equivalents: SS36-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. VRRM: 60V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

Double: Double. Semiconductor material: silicon. Forward current (AV): 5A. Note: ->l<-. Note: ULTRA FAST. Note: Ifsm--50A10mS. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V

Double: Double. Semiconductor material: silicon. Forward current (AV): 8A. Note: ->l<-. Note: ULTRA FAST. Note: Ifsm--80A10mS. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SOD-123. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.5A. Ifsm [A]: 5.5A. Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 50uA..4mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.5V @ 0.5A

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SMA. Housing (JEDEC standard): DO-214AC. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 1A. Ifsm [A]: 75A. Close voltage (repetitive) Vrrm [V]: 30 v. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.26V @ 1A. Leakage current on closing Ir [A]: 6mA...15mA

Conditioning: plastic tube. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Forward current (AV): 10A/diode. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Threshold voltage Vf (max): 0.65V. Forward voltage Vf (min): 0.72V. VRRM: 45V. Number of terminals: 3. Note: Schottky rectifier diode. Conditioning unit: 50. Note: dual silicon diode. Spec info: total 20A, IFSM 180App (t=10ms)

Conditioning: plastic tube. Dielectric structure: common cathode. Semiconductor material: Sb. Function: High Voltage Power Schottky Rectifier. Forward current (AV): 20A. IFSM: 250A. MRI (max): 2mA. MRI (min): 4.5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.56V. VRRM: 100V. Quantity per case: 2. Number of terminals: 3. Note: IFSM--250Ap. Conditioning unit: 50. Spec info: insulation voltage 2000VDC, capacitance 45pF

Conditioning: plastic tube. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: High Voltage Power Schottky Rectifier. Forward current (AV): 10A. IFSM: 250A. MRI (max): 6mA. MRI (min): 4.5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.56V. VRRM: 100V. Number of terminals: 3. Note: Schottky rectifier diode. Conditioning unit: 50. Spec info: IFSM--250App, t=10mS

Semiconductor material: Sb. Function: 'High Voltage Power Schottky'. Forward current (AV): 2A. Forward current (RMS): 10A. IFSM: 50A / 10mS. MRI (max): 5mA. MRI (min): 1uA. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.65V. VRRM: 100V. Number of terminals: 2

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: power Schottky rectifier diode. low voltage drop. Forward current (AV): 2A. IFSM: 75A. MRI (max): 80mA. MRI (min): 220uA. Marking on the case: GD4. Temperature: +150°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.6x3.95mm ). Threshold voltage Vf (max): 0.39V. Forward voltage Vf (min): 0.25V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Note: screen printing/SMD code GD4. Spec info: IFSM--75Ap (tp =10ms)

Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Dual Schottky diode. Forward current (AV): 30A. IFSM: 220A. MRI (max): 11mA. MRI (min): 200uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.5V. VRRM: 45V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--220Ap, t=10ms

Conditioning: plastic tube. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: High Voltage Power Schottky Rectifier. Forward current (AV): 15A. IFSM: 250A. MRI (max): 6mA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.74V. VRRM: 100V. Number of terminals: 3. Note: Schottky rectifier diode. Forward voltage Vf (min): 0.64V. Conditioning unit: 50. Spec info: IFSM--250App, t=10mS

Semiconductor material: Sb. Function: 'High Voltage Power Schottky'. Forward current (AV): 5A. IFSM: 75A. MRI (max): 4.5mA. MRI (min): 3.5uA. Marking on the case: S5H100. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252A ( Dpak ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.57V. VRRM: 100V. Spec info: 75App/10ms

Semiconductor material: Sb. Function: Power Schottky Rectifier. Forward current (AV): 5A. IFSM: 150A. MRI (max): 0.75mA. MRI (min): 0.2mA. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Number of terminals: 2. Spec info: 150App / 10ms

Conditioning: plastic tube. Dielectric structure: common cathode. Semiconductor material: silicon. Function: High Voltage Power Schottky Rectifier. Forward current (AV): 30A. IFSM: 270A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.97V. VRRM: 170V. Quantity per case: 2. Number of terminals: 3. Note: IF(AV) 30A/diode, 60A/total. Note: Schottky rectifier diode. Conditioning unit: 50. Spec info: IFSM--270App, t=10mS

Semiconductor material: Sb. Forward current (AV): 8A. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 100V. Note: 'High Voltage Power Schottky'. Note: 250App/10ms

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semiconductor material: silicon. Function: ultra-fast high voltage rectifier diode. Forward current (AV): 12A. IFSM: 110A. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.25V. VRRM: 600V. Spec info: Ifsm 110App/10ms