Standard and Rectifier Diodes

Dielectric structure: casing connected to the anode. Semiconductor material: silicon. Function: All-purpose power rectifier. Forward current (AV): 165A. IFSM: 2500A. Assembly/installation: Threaded fastening. Housing: DO-205. Housing (according to data sheet): DO-205. Operating temperature: -40...+180°C. Threshold voltage Vf (max): 1.5V. VRRM: 1200V. Note: M12 thread, 8.2mm eyelet. Used for: can also be used for solar panel systems. Quantity per case: 1. Number of terminals: 1. Spec info: Threaded housing--Anode, (high current)

RoHS: yes. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-213AB. Semiconductor material: silicon. Function: 1N4007 SMD version. Forward current (AV): 1A. IFSM: 10A. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: Ifsm 10Ap

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: MELF. Housing (JEDEC standard): DO-213AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 1A. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 1mA..10mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.9V @ 3A

Semiconductor material: Sb. Forward current (AV): 1A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.5x4.8mm ). VRRM: 20V. Number of terminals: 2. Note: HIGH CURRENT SCHOTTKY BARRIER RECTIFIER

Semiconductor material: Sb. Forward current (AV): 1A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.5x4.8mm ). VRRM: 60V. Number of terminals: 2. Note: HIGH CURRENT SCHOTTKY BARRIER RECTIFIER

Cj: 700pF. Conditioning: plastic tube. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 8A. IFSM: 200A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Conditioning unit: 50. Spec info: Ifsm--200Ap

Semiconductor material: Sb. Forward current (AV): 2A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). VRRM: 30 v. Number of terminals: 2. Note: 50App/8.3ms. Note: Vf 0.55V

Cj: 110pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 2A. IFSM: 50A. MRI (max): 20mA. MRI (min): 1mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). Operating temperature: -50...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--50Ap (t=8.3ms)

Semiconductor material: Sb. Forward current (AV): 2A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). VRRM: 50V. Number of terminals: 2. Note: 50App/8.3ms. Note: Vf 0.70V

Cj: 170pF. Semiconductor material: Sb. Forward current (AV): 2A. Forward current (RMS): 50A. MRI (max): 10mA. MRI (min): 1mA. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x6.7mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.70V. VRRM: 60V. Number of terminals: 2. Spec info: 50App / 8.3ms

Cj: 200pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 3A. IFSM: 80A. MRI (max): 10mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--80Ap, t=8.3ms

Cj: 130pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 3A. IFSM: 80A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--80Ap, t=8.3ms

Cj: 72pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 3A. IFSM: 80A. MRI (max): 2mA. MRI (min): 0.1mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.85V. VRRM: 100V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--80Ap, t=8.3ms

Cj: 72pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): ns. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 3A. IFSM: 80A. MRI (max): 2mA. MRI (min): 0.1mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). Operating temperature: -65°C...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 150V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--80Ap, t=8.3ms

Cj: 380pF. Semiconductor material: Sb. Forward current (AV): 5A. Forward current (RMS): 150Ap / 8.3ms. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.7V. VRRM: 60V. Number of terminals: 2. Note: RMS Rew--42V

Cj: 400pF. Dielectric structure: Anode-Cathode. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 150A. Marking on the case: SR5100. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD DO-27 ( 5.2x9mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.85V. VRRM: 100V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap

Cj: 250pF. Semiconductor material: Sb. Forward current (AV): 5A. Forward current (RMS): 120Ap / 8.3ms. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. VRRM: 20V. Number of terminals: 2

Cj: 175pF. Dielectric structure: Anode-Cathode. Function: Schottky rectifier diode. Forward current (AV): 5A. IFSM: 150A. Marking on the case: SR5200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap

Cj: 100pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): SMA. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 1A. IFSM: 30A. MRI (max): 20mA. MRI (min): 1mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.5x2.79mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34B. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AA (SMB) 4.57x3.94mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: IFSM--80Ap (tp=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

Cj: 152pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 12 ns. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. MRI (max): 60mA. MRI (min): 500uA. Marking on the case: 34L. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-123. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Note: screen printing/SMD code 34L. Housing (according to data sheet): 425AB SMA (3.8x1.9mm). Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: IFSM--80Ap (tp=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Equivalents: SS36-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. VRRM: 60V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 5A. IFSM: 100A. MRI (max): 20mA. MRI (min): 200uA. Marking on the case: SS54. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.6V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

Double: Double. Semiconductor material: silicon. Forward current (AV): 5A. Note: ->l<-. Note: ULTRA FAST. Note: Ifsm--50A10mS. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V