Standard and Rectifier Diodes

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). VRRM: 200V. Quantity per case: 1. Semiconductor material: silicon. Function: rectifier diode for switching power supply. MRI (max): 5uA. MRI (min): 2uA. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C

Forward current (AV): 15A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 110Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V

Forward current (AV): 15A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Semiconductor material: silicon. Function: Ultrafast. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: rectifier diode for switching power supply. Number of terminals: 2. RoHS: yes. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V

Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR420. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V

Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Note: Ultra Fast Recovery Diode. Marking on the case: MUR 6060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U8100E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U820. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V

Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average Rectified Current per Diode: 8A. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.5V / 8A. Mounting Type: THT. Reverse Leakage Current: <500uA / 600V. Reverse Recovery Time (Max): 60ns. Information: MUR860. Series: MUR860. MSL: yes

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. Number of terminals: 2. RoHS: yes. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U880E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. RoHS: yes. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1D. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V

Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1J. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Average Rectified Current per Diode: 20A. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): 1500 ns. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns. Information: P2000M. Series: 2. MSL: yes

VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configuration: independent. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns