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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

544 products available
Products per page :
Quantity in stock : 58
MUR820

MUR820

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR820
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U820. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
MUR820
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U820. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 575
MUR860

MUR860

Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average...
MUR860
Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average Rectified Current per Diode: 8A. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.5V / 8A. Mounting Type: THT. Reverse Leakage Current: <500uA / 600V. Reverse Recovery Time (Max): 60ns. Information: MUR860. Series: MUR860. MSL: yes
MUR860
Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average Rectified Current per Diode: 8A. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.5V / 8A. Mounting Type: THT. Reverse Leakage Current: <500uA / 600V. Reverse Recovery Time (Max): 60ns. Information: MUR860. Series: MUR860. MSL: yes
Set of 1
0.86$ VAT incl.
(0.86$ excl. VAT)
0.86$
Quantity in stock : 109
MUR860G

MUR860G

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR860G
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. Number of terminals: 2. RoHS: yes. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
MUR860G
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. Number of terminals: 2. RoHS: yes. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
Set of 1
1.52$ VAT incl.
(1.52$ excl. VAT)
1.52$
Quantity in stock : 38
MUR880

MUR880

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR880
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U880E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
MUR880
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U880E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 11951
MURS120T3G

MURS120T3G

Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214A...
MURS120T3G
Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. RoHS: yes. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1D. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
MURS120T3G
Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. RoHS: yes. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1D. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 1895
MURS160T3G

MURS160T3G

Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214A...
MURS160T3G
Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1J. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
MURS160T3G
Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1J. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 100
MURS320T3G

MURS320T3G

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214A...
MURS320T3G
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
MURS320T3G
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 449
MURS360

MURS360

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214A...
MURS360
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
MURS360
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 261
MURS360B

MURS360B

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214...
MURS360B
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V
MURS360B
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 1081
P1000M

P1000M

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Averag...
P1000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes
P1000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes
Set of 1
0.98$ VAT incl.
(0.98$ excl. VAT)
0.98$
Quantity in stock : 1245
P2000M

P2000M

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Avera...
P2000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Average Rectified Current per Diode: 20A. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): 1500 ns. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns. Information: P2000M. Series: 2. MSL: yes
P2000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Average Rectified Current per Diode: 20A. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): 1500 ns. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns. Information: P2000M. Series: 2. MSL: yes
Set of 1
1.36$ VAT incl.
(1.36$ excl. VAT)
1.36$
Quantity in stock : 840
P2500W

P2500W

VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configurat...
P2500W
VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configuration: independent. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns
P2500W
VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configuration: independent. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns
Set of 1
2.30$ VAT incl.
(2.30$ excl. VAT)
2.30$
Quantity in stock : 626
P600D

P600D

Housing: P600. VRRM: 200V. Average Rectified Current per Diode: 6A. Diode type: rectifier diode. Dio...
P600D
Housing: P600. VRRM: 200V. Average Rectified Current per Diode: 6A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 200V. Reverse Recovery Time (Max): 1500ns. Series: P600
P600D
Housing: P600. VRRM: 200V. Average Rectified Current per Diode: 6A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 200V. Reverse Recovery Time (Max): 1500ns. Series: P600
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 3039
P600K

P600K

Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm )...
P600K
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). VRRM: 800V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Spec info: IFSM--400Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V
P600K
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). VRRM: 800V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Spec info: IFSM--400Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 3457
P600M

P600M

Housing (according to data sheet): R-6 ( 9.1x9.1mm ). VRRM: 1000V. Housing: P600. Average Rectified ...
P600M
Housing (according to data sheet): R-6 ( 9.1x9.1mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 6A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1V @ 5A. Series: P600. MSL: 10uA
P600M
Housing (according to data sheet): R-6 ( 9.1x9.1mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 6A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1V @ 5A. Series: P600. MSL: 10uA
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$
Quantity in stock : 134
P600S

P600S

Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm...
P600S
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V
P600S
Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V
Set of 1
0.64$ VAT incl.
(0.64$ excl. VAT)
0.64$
Quantity in stock : 2641
PMEG6010CEJ

PMEG6010CEJ

Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. ...
PMEG6010CEJ
Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Marking on the case: EQ. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V
PMEG6010CEJ
Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Marking on the case: EQ. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 39
PR1504

PR1504

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2....
PR1504
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: IFSM--50App, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
PR1504
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: IFSM--50App, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 1
1.22$ VAT incl.
(1.22$ excl. VAT)
1.22$
Out of stock
PS1010RS

PS1010RS

IFSM: 30A. Housing (according to data sheet): A-405 (5.2x2.7mm). VRRM: 1000V. Quantity per case: 1. ...
PS1010RS
IFSM: 30A. Housing (according to data sheet): A-405 (5.2x2.7mm). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
PS1010RS
IFSM: 30A. Housing (according to data sheet): A-405 (5.2x2.7mm). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 24
R2KY

R2KY

Note: DAEWOO TV...
R2KY
Note: DAEWOO TV
R2KY
Note: DAEWOO TV
Set of 1
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$
Quantity in stock : 12
R2M

R2M

Note: SONY TV...
R2M
Note: SONY TV
R2M
Note: SONY TV
Set of 1
1.06$ VAT incl.
(1.06$ excl. VAT)
1.06$
Quantity in stock : 47
RF2001T3D

RF2001T3D

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F...
RF2001T3D
Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. VRRM: 350V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Fast switching, Fast recovery diode. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFMS 100Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V
RF2001T3D
Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. VRRM: 350V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Fast switching, Fast recovery diode. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFMS 100Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V
Set of 1
1.74$ VAT incl.
(1.74$ excl. VAT)
1.74$
Quantity in stock : 6
RFU20TM5S

RFU20TM5S

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F...
RFU20TM5S
Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 530V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Number of terminals: 3. RoHS: yes. Spec info: Silicon epitaxial planer. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V
RFU20TM5S
Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 530V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Number of terminals: 3. RoHS: yes. Spec info: Silicon epitaxial planer. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V
Set of 1
4.33$ VAT incl.
(4.33$ excl. VAT)
4.33$
Quantity in stock : 32
RG2Y

RG2Y

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x...
RG2Y
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). VRRM: 70V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V
RG2Y
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). VRRM: 70V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 590
RG4A

RG4A

Forward current (AV): 2A. IFSM: 50A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x...
RG4A
Forward current (AV): 2A. IFSM: 50A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V
RG4A
Forward current (AV): 2A. IFSM: 50A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V
Set of 1
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$

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