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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
1...131415 1617...21
Quantity in stock : 1907
MURS160T3G

MURS160T3G

Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafa...
MURS160T3G
Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 1A. IFSM: 35A. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Note: screen printing/CMS code U1J
MURS160T3G
Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 1A. IFSM: 35A. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Note: screen printing/CMS code U1J
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 100
MURS320T3G

MURS320T3G

Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forw...
MURS320T3G
Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 3A. IFSM: 75A. MRI (max): 150uA. MRI (min): 5uA. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Note: screen printing/CMS code U3D
MURS320T3G
Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 3A. IFSM: 75A. MRI (max): 150uA. MRI (min): 5uA. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Note: screen printing/CMS code U3D
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 453
MURS360

MURS360

Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 75A. MRI (...
MURS360
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 75A. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
MURS360
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 75A. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 261
MURS360B

MURS360B

Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 100A. MRI ...
MURS360B
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 100A. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
MURS360B
Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 100A. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 884
P1000M

P1000M

Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semi...
P1000M
Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 400A. MRI (min): 10uA. Marking on the case: P1000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. VRRM: 1000V. Spec info: IFSM--800Ap t=10mS
P1000M
Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 400A. MRI (min): 10uA. Marking on the case: P1000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. VRRM: 1000V. Spec info: IFSM--800Ap t=10mS
Set of 1
0.98$ VAT incl.
(0.98$ excl. VAT)
0.98$
Quantity in stock : 1700
P2000M

P2000M

Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Sem...
P2000M
Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 500A. MRI (min): 10uA. Marking on the case: P2000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. VRRM: 1000V. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms)
P2000M
Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 500A. MRI (min): 10uA. Marking on the case: P2000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. VRRM: 1000V. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms)
Set of 1
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$
Quantity in stock : 521
P600K

P600K

Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Sem...
P600K
Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V. VRRM: 800V. Spec info: IFSM--400Ap (t=8.3ms)
P600K
Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V. VRRM: 800V. Spec info: IFSM--400Ap (t=8.3ms)
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 4826
P600M

P600M

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Co...
P600M
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 6A. Ifsm [A]: 450A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 10uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1V @ 5A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Housing (according to data sheet): R-6 ( 9.1x9.1mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
P600M
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 6A. Ifsm [A]: 450A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 10uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1V @ 5A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Housing (according to data sheet): R-6 ( 9.1x9.1mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$
Quantity in stock : 134
P600S

P600S

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semi...
P600S
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 400A. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. VRRM: 1200V. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms)
P600S
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 400A. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. VRRM: 1200V. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms)
Set of 1
0.64$ VAT incl.
(0.64$ excl. VAT)
0.64$
Quantity in stock : 2666
PMEG6010CEJ

PMEG6010CEJ

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier d...
PMEG6010CEJ
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Forward current (AV): 1A. IFSM: 10A. Marking on the case: EQ. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323F. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1
PMEG6010CEJ
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Forward current (AV): 1A. IFSM: 10A. Marking on the case: EQ. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323F. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 39
PR1504

PR1504

Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: sil...
PR1504
Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 1.5A. IFSM: 50A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=8.3mS
PR1504
Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 1.5A. IFSM: 50A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=8.3mS
Set of 1
1.22$ VAT incl.
(1.22$ excl. VAT)
1.22$
Out of stock
PS1010RS

PS1010RS

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Func...
PS1010RS
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Housing (according to data sheet): A-405 (5.2x2.7mm)
PS1010RS
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Housing (according to data sheet): A-405 (5.2x2.7mm)
Set of 10
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 24
R2KY

R2KY

Note: DAEWOO TV...
R2KY
Note: DAEWOO TV
R2KY
Note: DAEWOO TV
Set of 1
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$
Quantity in stock : 12
R2M

R2M

Note: SONY TV...
R2M
Note: SONY TV
R2M
Note: SONY TV
Set of 1
1.06$ VAT incl.
(1.06$ excl. VAT)
1.06$
Quantity in stock : 57
RF2001T3D

RF2001T3D

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: commo...
RF2001T3D
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 100A. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Threshold voltage Vf (max): 1.3V. VRRM: 350V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap
RF2001T3D
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 100A. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Threshold voltage Vf (max): 1.3V. VRRM: 350V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap
Set of 1
1.74$ VAT incl.
(1.74$ excl. VAT)
1.74$
Quantity in stock : 6
RFU20TM5S

RFU20TM5S

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor ma...
RFU20TM5S
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 20A. IFSM: 100A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V. VRRM: 530V. Spec info: Silicon epitaxial planer
RFU20TM5S
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 20A. IFSM: 100A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V. VRRM: 530V. Spec info: Silicon epitaxial planer
Set of 1
4.33$ VAT incl.
(4.33$ excl. VAT)
4.33$
Quantity in stock : 34
RG2Y

RG2Y

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor m...
RG2Y
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Forward current (AV): 1.5A. IFSM: 50A. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. VRRM: 70V. Spec info: IFMS 50Ap
RG2Y
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Forward current (AV): 1.5A. IFSM: 50A. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. VRRM: 70V. Spec info: IFMS 50Ap
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 590
RG4A

RG4A

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor ma...
RG4A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V. VRRM: 600V
RG4A
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V. VRRM: 600V
Set of 1
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 53
RG4C

RG4C

Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fas...
RG4C
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 60A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 1000V
RG4C
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 60A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 1000V
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$
Quantity in stock : 67
RG4Z

RG4Z

Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fas...
RG4Z
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 3A. IFSM: 80A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 200V
RG4Z
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 3A. IFSM: 80A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 200V
Set of 1
2.22$ VAT incl.
(2.22$ excl. VAT)
2.22$
Quantity in stock : 5282
RGP02-20E

RGP02-20E

Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semico...
RGP02-20E
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 0.5A. IFSM: 20A. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V. VRRM: 2000V. Spec info: IFSM--20Ap t=8.3mS
RGP02-20E
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 0.5A. IFSM: 20A. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V. VRRM: 2000V. Spec info: IFSM--20Ap t=8.3mS
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 198
RGP10D

RGP10D

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
RGP10D
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10D
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 66
RGP10G

RGP10G

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
RGP10G
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS
RGP10G
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$
Quantity in stock : 737
RGP10J

RGP10J

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semic...
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 18
RGP15G

RGP15G

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15G
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V
RGP15G
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
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