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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

558 products available
Products per page :
Quantity in stock : 322
MUR120

MUR120

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (...
MUR120
Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). VRRM: 200V. Quantity per case: 1. Semiconductor material: silicon. Function: rectifier diode for switching power supply. MRI (max): 5uA. MRI (min): 2uA. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C
MUR120
Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). VRRM: 200V. Quantity per case: 1. Semiconductor material: silicon. Function: rectifier diode for switching power supply. MRI (max): 5uA. MRI (min): 2uA. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 40
MUR15120L

MUR15120L

Forward current (AV): 15A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC-...
MUR15120L
Forward current (AV): 15A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 110Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V
MUR15120L
Forward current (AV): 15A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 110Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V
Set of 1
3.26$ VAT incl.
(3.26$ excl. VAT)
3.26$
Quantity in stock : 71
MUR1560

MUR1560

Forward current (AV): 15A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC....
MUR1560
Forward current (AV): 15A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Semiconductor material: silicon. Function: Ultrafast. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C
MUR1560
Forward current (AV): 15A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Semiconductor material: silicon. Function: Ultrafast. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C
Set of 1
2.03$ VAT incl.
(2.03$ excl. VAT)
2.03$
Quantity in stock : 4632
MUR160

MUR160

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x...
MUR160
Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: rectifier diode for switching power supply. Number of terminals: 2. RoHS: yes. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
MUR160
Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: rectifier diode for switching power supply. Number of terminals: 2. RoHS: yes. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
Set of 1
0.33$ VAT incl.
(0.33$ excl. VAT)
0.33$
Quantity in stock : 45
MUR1620CT

MUR1620CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
Set of 1
2.23$ VAT incl.
(2.23$ excl. VAT)
2.23$
Quantity in stock : 57
MUR1620CTR

MUR1620CTR

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1620CTR
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V
MUR1620CTR
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V
Set of 1
7.42$ VAT incl.
(7.42$ excl. VAT)
7.42$
Quantity in stock : 524
MUR1660CT

MUR1660CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
Set of 1
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$
Quantity in stock : 71
MUR4100E

MUR4100E

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( ...
MUR4100E
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V
MUR4100E
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 261
MUR420

MUR420

Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD (...
MUR420
Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR420. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V
MUR420
Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR420. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 511
MUR460

MUR460

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( ...
MUR460
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V
MUR460
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 152
MUR480E

MUR480E

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( ...
MUR480E
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V
MUR480E
Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 20
MUR6060

MUR6060

Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC....
MUR6060
Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Note: Ultra Fast Recovery Diode. Marking on the case: MUR 6060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
MUR6060
Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Note: Ultra Fast Recovery Diode. Marking on the case: MUR 6060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
Set of 1
4.17$ VAT incl.
(4.17$ excl. VAT)
4.17$
Quantity in stock : 35
MUR8100

MUR8100

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR8100
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U8100E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
MUR8100
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U8100E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
Set of 1
1.82$ VAT incl.
(1.82$ excl. VAT)
1.82$
Quantity in stock : 58
MUR820

MUR820

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR820
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U820. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
MUR820
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U820. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 575
MUR860

MUR860

Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average...
MUR860
Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average Rectified Current per Diode: 8A. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.5V / 8A. Mounting Type: THT. Reverse Leakage Current: <500uA / 600V. Reverse Recovery Time (Max): 60ns. Information: MUR860. Series: MUR860. MSL: yes
MUR860
Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average Rectified Current per Diode: 8A. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.5V / 8A. Mounting Type: THT. Reverse Leakage Current: <500uA / 600V. Reverse Recovery Time (Max): 60ns. Information: MUR860. Series: MUR860. MSL: yes
Set of 1
0.86$ VAT incl.
(0.86$ excl. VAT)
0.86$
Quantity in stock : 109
MUR860G

MUR860G

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR860G
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. Number of terminals: 2. RoHS: yes. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
MUR860G
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. Number of terminals: 2. RoHS: yes. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
Set of 1
1.52$ VAT incl.
(1.52$ excl. VAT)
1.52$
Quantity in stock : 38
MUR880

MUR880

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR880
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U880E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
MUR880
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U880E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 11941
MURS120T3G

MURS120T3G

Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214A...
MURS120T3G
Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. RoHS: yes. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1D. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
MURS120T3G
Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. RoHS: yes. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1D. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 1895
MURS160T3G

MURS160T3G

Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214A...
MURS160T3G
Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1J. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
MURS160T3G
Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1J. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 100
MURS320T3G

MURS320T3G

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214A...
MURS320T3G
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
MURS320T3G
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 449
MURS360

MURS360

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214A...
MURS360
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
MURS360
Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 261
MURS360B

MURS360B

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214...
MURS360B
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V
MURS360B
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 1071
P1000M

P1000M

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Averag...
P1000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes
P1000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes
Set of 1
0.98$ VAT incl.
(0.98$ excl. VAT)
0.98$
Quantity in stock : 1245
P2000M

P2000M

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Avera...
P2000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Average Rectified Current per Diode: 20A. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): 1500 ns. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns. Information: P2000M. Series: 2. MSL: yes
P2000M
Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Average Rectified Current per Diode: 20A. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): 1500 ns. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns. Information: P2000M. Series: 2. MSL: yes
Set of 1
1.36$ VAT incl.
(1.36$ excl. VAT)
1.36$
Quantity in stock : 840
P2500W

P2500W

VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configurat...
P2500W
VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configuration: independent. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns
P2500W
VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configuration: independent. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns
Set of 1
2.30$ VAT incl.
(2.30$ excl. VAT)
2.30$

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