Standard and Rectifier Diodes

Housing: TO218. VRRM: 45V. Average Rectified Current per Diode: 20A. Diode type: schottky. Forward Voltage (Max): <0.60V / 20A. Mounting Type: THT. Reverse Leakage Current: 1mA / 45V. Series: MBR40

Forward current (AV): 40A (2x20A). IFSM: 400A (2x200A). Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 45V. Quantity per case: 2. Dielectric material: common cathode. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.7V

Forward current (AV): 7.5A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V. Semiconductor material: Sb. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Series: MBR7. MSL: n/a

Forward current (AV): 7.5A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 60V. Semiconductor material: Sb. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Series: MBR7. MSL: n/a

VRRM: 200V. Average Rectified Current per Diode: 10A. Diode type: schottky. Mounting Type: SMD. Reverse Leakage Current: 1mA / 200V. Series: MBRB

Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Forward current [A]: 2 X 3A. RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Configuration: surface-mounted component (SMD). Number of terminals: 3. Ifsm [A]: 75A. Forward voltage Vfmax (V): 0.7V @ 3A. Close voltage (repetitive) Vrrm [V]: 50V. Leakage current on closing Ir [A]: 0.1mA..15mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C

Forward current (AV): 8A. IFSM: 75A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): Dpak-3. VRRM: 35V. Function: 'High Voltage Power Schottky'. MRI (max): 35mA. MRI (min): 1.4mA. Marking on the case: 853LG. RoHS: yes. Schottky diode?: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.51V. Forward voltage Vf (min): 0.41V

Forward current (AV): 20A. IFSM: 150A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 150Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.75V

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AA. VRRM: 40V. Semiconductor material: Sb. Note: Vf 0.6V/1A. Note: screen printing/SMD code B14L. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 1A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA. VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 0.5mA. Marking on the case: B19. Number of terminals: 2. RoHS: yes. Spec info: screen printing/SMD code B19. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V

Forward current (AV): 3A. IFSM: 130A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B310. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Spec info: Vf 0.79V/3A, (iF=3.0A, TJ=25°C)

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 5mA. MRI (min): 1mA. Marking on the case: B320. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.84V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.84V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 30 v. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B33. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.50V/3A, (If=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B34. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.525V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.525V. Forward voltage Vf (min): 0.525V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMB CASE 403A-03 ( 4.32x3.56mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V

Forward current (AV): 75A. IFSM: 1200A. Housing: TO-240. Housing (according to data sheet): TO-240AA. VRRM: 1200V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: diode module. 'Fast Recovery Epitaxial Diode (FRED)'. Note: Ifsm--TVJ=45°C; t=10ms (50 Hz) 1200A. Note: dimensions 92x20.8x30mm. Note: 2 diode module. Number of terminals: 3. RoHS: yes. Spec info: insulation 3600V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.58V. Forward voltage Vf (min): 1.8V

Forward current (AV): 880A. IFSM: n/a. VRRM: 400V. Pinout: M6 screws (x3). Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 220 ns. Semiconductor material: silicon. Function: mains diode Module, high current. Number of terminals: 3. Dimensions: 94x34x30mm. Pd (Power Dissipation, Max): 1100W. RoHS: yes. Spec info: Ifsm--Tvj=25°C, tP=10ms 13000A. Assembly/installation: PCB through-hole mounting. Electrical insulation: 3600V, 50/60Hz. Technology: dual common cathode diode (HiPerFREDTM). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.1V

Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. VRRM: 100V. Cj: 4pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ifsm--2A t=1us, 1A t=1s. Note: CT--4pF (VR=0V, f=1.0MHz). Note: screen printing/SMD code D6. MRI (max): 5uA. MRI (min): 25nA. Marking on the case: D6. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1V

Forward current (AV): 5A. IFSM: 300A. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Note: diameter 8mm x 7.5mm. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Semiconductor material: silicon. Note: ScanSwitch. Note: IFSM 100Aps. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Conditioning unit: 1000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Equivalents: MUR1100ERLG. Number of terminals: 2. RoHS: yes. Spec info: IFSM. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). VRRM: 200V. Quantity per case: 1. Semiconductor material: silicon. Function: rectifier diode for switching power supply. MRI (max): 5uA. MRI (min): 2uA. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C

Forward current (AV): 15A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 110Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V

Forward current (AV): 15A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Semiconductor material: silicon. Function: Ultrafast. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C