Standard and Rectifier Diodes

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: IFSM--35App

Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap

Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: Ifsm 100Ap

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 125A. Marking on the case: MUR420. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Forward current (AV): 60A. IFSM: 550A. Marking on the case: MUR 6060. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 600V. Number of terminals: 2. Used for: can also be used for solar panel systems. Note: Ultra Fast Recovery Diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U8100E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U820. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MUR860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: ultra fast rectifier diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: ultra fast rectifier diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U880E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode

Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 1A. IFSM: 40A. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Note: screen printing/CMS code U1D

Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 1A. IFSM: 35A. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Note: screen printing/CMS code U1J

Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 3A. IFSM: 75A. MRI (max): 150uA. MRI (min): 5uA. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Note: screen printing/CMS code U3D

Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 75A. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J

Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 100A. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J

Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 400A. MRI (min): 10uA. Marking on the case: P1000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. VRRM: 1000V. Spec info: IFSM--800Ap t=10mS

Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 500A. MRI (min): 10uA. Marking on the case: P2000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. VRRM: 1000V. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms)

Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V. VRRM: 800V. Spec info: IFSM--400Ap (t=8.3ms)

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: D8x7.5mm. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 6A. Ifsm [A]: 450A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 10uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1V @ 5A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Housing (according to data sheet): R-6 ( 9.1x9.1mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 400A. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. VRRM: 1200V. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms)

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Forward current (AV): 1A. IFSM: 10A. Marking on the case: EQ. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323F. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1