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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
1...121314 1516...21
Quantity in stock : 17
MEE75-12DA

MEE75-12DA

Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can a...
MEE75-12DA
Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: diode module. 'Fast Recovery Epitaxial Diode (FRED)'. Forward current (AV): 75A. IFSM: 1200A. Note: Ifsm--TVJ=45°C; t=10ms (50 Hz) 1200A. Note: dimensions 92x20.8x30mm. Note: 2 diode module. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-240. Housing (according to data sheet): TO-240AA. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.58V. Forward voltage Vf (min): 1.8V. VRRM: 1200V. Spec info: insulation 3600V
MEE75-12DA
Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: diode module. 'Fast Recovery Epitaxial Diode (FRED)'. Forward current (AV): 75A. IFSM: 1200A. Note: Ifsm--TVJ=45°C; t=10ms (50 Hz) 1200A. Note: dimensions 92x20.8x30mm. Note: 2 diode module. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-240. Housing (according to data sheet): TO-240AA. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.58V. Forward voltage Vf (min): 1.8V. VRRM: 1200V. Spec info: insulation 3600V
Set of 1
42.31$ VAT incl.
(42.31$ excl. VAT)
42.31$
Out of stock
MEK-600-04-DA

MEK-600-04-DA

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 220 ns. Semiconductor ...
MEK-600-04-DA
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 220 ns. Semiconductor material: silicon. Function: mains diode Module, high current. Forward current (AV): 880A. IFSM: n/a. Number of terminals: 3. Dimensions: 94x34x30mm. Pd (Power Dissipation, Max): 1100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Electrical insulation: 3600V, 50/60Hz. Technology: dual common cathode diode (HiPerFREDTM). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Pinout: M6 screws (x3). Spec info: Ifsm--Tvj=25°C, tP=10ms 13000A
MEK-600-04-DA
Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 220 ns. Semiconductor material: silicon. Function: mains diode Module, high current. Forward current (AV): 880A. IFSM: n/a. Number of terminals: 3. Dimensions: 94x34x30mm. Pd (Power Dissipation, Max): 1100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Electrical insulation: 3600V, 50/60Hz. Technology: dual common cathode diode (HiPerFREDTM). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Pinout: M6 screws (x3). Spec info: Ifsm--Tvj=25°C, tP=10ms 13000A
Set of 1
141.83$ VAT incl.
(141.83$ excl. VAT)
141.83$
Quantity in stock : 2617
MMBD4148CA

MMBD4148CA

Cj: 4pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semicondu...
MMBD4148CA
Cj: 4pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ifsm--2A t=1us, 1A t=1s. Forward current (AV): 200mA. IFSM: 1A. Note: CT--4pF (VR=0V, f=1.0MHz). Note: screen printing/SMD code D6. MRI (max): 5uA. MRI (min): 25nA. Marking on the case: D6. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Threshold voltage Vf (max): 1V. VRRM: 100V
MMBD4148CA
Cj: 4pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ifsm--2A t=1us, 1A t=1s. Forward current (AV): 200mA. IFSM: 1A. Note: CT--4pF (VR=0V, f=1.0MHz). Note: screen printing/SMD code D6. MRI (max): 5uA. MRI (min): 25nA. Marking on the case: D6. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Threshold voltage Vf (max): 1V. VRRM: 100V
Set of 10
1.19$ VAT incl.
(1.19$ excl. VAT)
1.19$
Quantity in stock : 423
MR828

MR828

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forw...
MR828
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 800V. Number of terminals: 2. Note: diameter 8mm x 7.5mm. Quantity per case: 1
MR828
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 800V. Number of terminals: 2. Note: diameter 8mm x 7.5mm. Quantity per case: 1
Set of 1
0.49$ VAT incl.
(0.49$ excl. VAT)
0.49$
Quantity in stock : 1
MUR10120E

MUR10120E

Semiconductor material: silicon. Forward current (AV): 10A. Assembly/installation: PCB through-hole ...
MUR10120E
Semiconductor material: silicon. Forward current (AV): 10A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Note: ScanSwitch. Note: IFSM 100Aps
MUR10120E
Semiconductor material: silicon. Forward current (AV): 10A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Note: ScanSwitch. Note: IFSM 100Aps
Set of 1
4.14$ VAT incl.
(4.14$ excl. VAT)
4.14$
Quantity in stock : 121
MUR1100E

MUR1100E

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Funct...
MUR1100E
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Forward current (AV): 1A. IFSM: 35A. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM
MUR1100E
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Forward current (AV): 1A. IFSM: 35A. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 339
MUR120

MUR120

Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. MRI (max): 5uA. MRI (min): 2uA...
MUR120
Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. MRI (max): 5uA. MRI (min): 2uA. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). Operating temperature: -65...+175°C. VRRM: 200V. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: IFSM--35App
MUR120
Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. MRI (max): 5uA. MRI (min): 2uA. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). Operating temperature: -65...+175°C. VRRM: 200V. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: IFSM--35App
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 40
MUR15120L

MUR15120L

Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semico...
MUR15120L
Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Forward current (AV): 15A. IFSM: 110A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V. VRRM: 1200V. Number of terminals: 2. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. Spec info: Ifsm 110Ap
MUR15120L
Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Forward current (AV): 15A. IFSM: 110A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V. VRRM: 1200V. Number of terminals: 2. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. Spec info: Ifsm 110Ap
Set of 1
3.26$ VAT incl.
(3.26$ excl. VAT)
3.26$
Quantity in stock : 100
MUR1560

MUR1560

Semiconductor material: silicon. Function: Ultrafast. Forward current (AV): 15A. IFSM: 150A. Assembl...
MUR1560
Semiconductor material: silicon. Function: Ultrafast. Forward current (AV): 15A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. VRRM: 600V. Number of terminals: 2
MUR1560
Semiconductor material: silicon. Function: Ultrafast. Forward current (AV): 15A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. VRRM: 600V. Number of terminals: 2
Set of 1
2.03$ VAT incl.
(2.03$ excl. VAT)
2.03$
Quantity in stock : 4663
MUR160

MUR160

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forwa...
MUR160
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: IFSM--35App
MUR160
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: IFSM--35App
Set of 1
0.33$ VAT incl.
(0.33$ excl. VAT)
0.33$
Quantity in stock : 89
MUR1620CT

MUR1620CT

Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Func...
MUR1620CT
Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
MUR1620CT
Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
Set of 1
2.23$ VAT incl.
(2.23$ excl. VAT)
2.23$
Quantity in stock : 64
MUR1620CTR

MUR1620CTR

Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current ...
MUR1620CTR
Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: Ifsm 100Ap
MUR1620CTR
Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: Ifsm 100Ap
Set of 1
7.42$ VAT incl.
(7.42$ excl. VAT)
7.42$
Quantity in stock : 608
MUR1660CT

MUR1660CT

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Funct...
MUR1660CT
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
MUR1660CT
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
Set of 1
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$
Out of stock
MUR3060PTG

MUR3060PTG

Conditioning: plastic tube. Conditioning unit: 30. Dielectric structure: common cathode. Trr Diode (...
MUR3060PTG
Conditioning: plastic tube. Conditioning unit: 30. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: Sb. Forward current (AV): 30A. IFSM: 200A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: IFSM--200App/8.3mS. Function: Ultrafast, High Voltage SWITCHMODE Power Rectifier. Note: dual silicon diode
MUR3060PTG
Conditioning: plastic tube. Conditioning unit: 30. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: Sb. Forward current (AV): 30A. IFSM: 200A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: IFSM--200App/8.3mS. Function: Ultrafast, High Voltage SWITCHMODE Power Rectifier. Note: dual silicon diode
Set of 1
6.01$ VAT incl.
(6.01$ excl. VAT)
6.01$
Quantity in stock : 81
MUR4100E

MUR4100E

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Funct...
MUR4100E
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1
MUR4100E
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 405
MUR420

MUR420

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Funct...
MUR420
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 125A. Marking on the case: MUR420. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1
MUR420
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 125A. Marking on the case: MUR420. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 573
MUR460

MUR460

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Funct...
MUR460
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1
MUR460
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 152
MUR480E

MUR480E

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Funct...
MUR480E
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1
MUR480E
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Forward current (AV): 4A. IFSM: 70A. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 25
MUR6060

MUR6060

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor ma...
MUR6060
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Forward current (AV): 60A. IFSM: 550A. Marking on the case: MUR 6060. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 600V. Number of terminals: 2. Used for: can also be used for solar panel systems. Note: Ultra Fast Recovery Diode
MUR6060
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Forward current (AV): 60A. IFSM: 550A. Marking on the case: MUR 6060. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 600V. Number of terminals: 2. Used for: can also be used for solar panel systems. Note: Ultra Fast Recovery Diode
Set of 1
4.17$ VAT incl.
(4.17$ excl. VAT)
4.17$
Quantity in stock : 38
MUR8100

MUR8100

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Functi...
MUR8100
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U8100E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
MUR8100
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U8100E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
Set of 1
1.82$ VAT incl.
(1.82$ excl. VAT)
1.82$
Quantity in stock : 33
MUR820

MUR820

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Funct...
MUR820
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U820. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
MUR820
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U820. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 708
MUR860

MUR860

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forwa...
MUR860
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MUR860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: ultra fast rectifier diode
MUR860
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MUR860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: ultra fast rectifier diode
Set of 1
0.86$ VAT incl.
(0.86$ excl. VAT)
0.86$
Quantity in stock : 69
MUR860G

MUR860G

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Funct...
MUR860G
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: ultra fast rectifier diode
MUR860G
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: ultra fast rectifier diode
Set of 1
1.52$ VAT incl.
(1.52$ excl. VAT)
1.52$
Quantity in stock : 50
MUR880

MUR880

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Functi...
MUR880
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U880E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
MUR880
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Forward current (AV): 8A. IFSM: 100A. Marking on the case: U880E. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Note: ultra-fast rectifier diode
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 11983
MURS120T3G

MURS120T3G

Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafa...
MURS120T3G
Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 1A. IFSM: 40A. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Note: screen printing/CMS code U1D
MURS120T3G
Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Forward current (AV): 1A. IFSM: 40A. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. VRRM: 200V. Number of terminals: 2. Note: screen printing/CMS code U1D
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
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