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Semiconductors Diodes Standard and Rectifier Diodes

MBR360

MBR360
[TITLE]
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 99 0.33$ 0.33$
100 - 249 0.32$ 0.32$
250 - 499 0.31$ 0.31$
500 - 1171 0.26$ 0.26$
Quantity U.P
1 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 99 0.33$ 0.33$
100 - 249 0.32$ 0.32$
250 - 499 0.31$ 0.31$
500 - 1171 0.26$ 0.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1171
Set of 1

MBR360. Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B360. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.6V. VRRM: 60V. Spec info: IFMS 150App/8.3ms, 60Hz. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 2694
SB360

SB360

RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Hous...
SB360
RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): 3A. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 0.5mA..5mA. Switching speed (regeneration time) tr [sec.]: -50...+150°C. VRRM: 60V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.68V @ 3A
SB360
RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): 3A. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 0.5mA..5mA. Switching speed (regeneration time) tr [sec.]: -50...+150°C. VRRM: 60V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.68V @ 3A
Set of 1
0.33$ VAT incl.
(0.33$ excl. VAT)
0.33$
Quantity in stock : 66
SR306

SR306

Cj: 130pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRI...
SR306
Cj: 130pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 3A. IFSM: 80A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--80Ap, t=8.3ms
SR306
Cj: 130pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 3A. IFSM: 80A. MRI (max): 5mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.3x9.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--80Ap, t=8.3ms
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 74
MBR3100G

MBR3100G

Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Catho...
MBR3100G
Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B3100. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.69V. VRRM: 100V. Spec info: IFMS 150App/8.3ms, 60Hz
MBR3100G
Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B3100. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.69V. VRRM: 100V. Spec info: IFMS 150App/8.3ms, 60Hz
Set of 1
1.39$ VAT incl.
(1.39$ excl. VAT)
1.39$

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Quantity in stock : 8
SB5150

SB5150

Cj: 150pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky recti...
SB5150
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SB5150
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2.64$ VAT incl.
(2.64$ excl. VAT)
2.64$
Quantity in stock : 531
BY550-400

BY550-400

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM...
BY550-400
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BY550-400
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0.28$ VAT incl.
(0.28$ excl. VAT)
0.28$
Quantity in stock : 24551
1N5408

1N5408

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
1N5408
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1N5408
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0.10$ VAT incl.
(0.10$ excl. VAT)
0.10$
Quantity in stock : 1368
1N5349B

1N5349B

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Pd (Power Dissipation, Max): 5...
1N5349B
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1N5349B
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[MODCATID]
[LOT]
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 54
TOP246YN

TOP246YN

Note: current limitation 2.7A. Frequency: 66kHz. Output: 700V 4.32A. Number of terminals: 6. RoHS: y...
TOP246YN
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TOP246YN
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5.25$ VAT incl.
(5.25$ excl. VAT)
5.25$
Quantity in stock : 241
SB3200

SB3200

Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Fu...
SB3200
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SB3200
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0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$
Quantity in stock : 1758
1N5956B

1N5956B

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: ESD Rating of Class ...
1N5956B
[LONGDESCRIPTION]
1N5956B
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[LOT]
0.47$ VAT incl.
(0.47$ excl. VAT)
0.47$
Quantity in stock : 2042
1N4149

1N4149

Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Forward current (AV): 500mA. IFSM: 1A. MRI ...
1N4149
[LONGDESCRIPTION]
1N4149
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[MODCATID]
[LOT]
0.17$ VAT incl.
(0.17$ excl. VAT)
0.17$
Quantity in stock : 47909
1N4148

1N4148

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
1N4148
[LONGDESCRIPTION]
1N4148
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0164$ VAT incl.
(0.0164$ excl. VAT)
0.0164$
Quantity in stock : 4507
LM324N

LM324N

Housing: DIP14. Configuration: PCB through-hole mounting. Number of terminals: 14. Number of circuit...
LM324N
[LONGDESCRIPTION]
LM324N
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.47$ VAT incl.
(0.47$ excl. VAT)
0.47$

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