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Semiconductors Transistors

SPP04N60C3

SPP04N60C3
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Quantity excl. VAT VAT incl.
1 - 4 3.00$ 3.00$
5 - 9 2.85$ 2.85$
10 - 24 2.70$ 2.70$
25 - 49 2.55$ 2.55$
50 - 50 2.49$ 2.49$
Quantity U.P
1 - 4 3.00$ 3.00$
5 - 9 2.85$ 2.85$
10 - 24 2.70$ 2.70$
25 - 49 2.55$ 2.55$
50 - 50 2.49$ 2.49$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 50
Set of 1

SPP04N60C3. C(in): 490pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 85m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Exceptional dv/dt capability. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 13:25.

Technical documentation

Equivalent products :

Out of stock
SPU04N60C3

SPU04N60C3

C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
SPU04N60C3
C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.85 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
SPU04N60C3
C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.85 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
4.69$ VAT incl.
(4.69$ excl. VAT)
4.69$
Quantity in stock : 97
SPA04N60C3

SPA04N60C3

C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
SPA04N60C3
C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 31W. On-resistance Rds On: 0.95 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). Spec info: Exceptional dv/dt capability. G-S Protection: no
SPA04N60C3
C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 31W. On-resistance Rds On: 0.95 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). Spec info: Exceptional dv/dt capability. G-S Protection: no
Set of 1
2.42$ VAT incl.
(2.42$ excl. VAT)
2.42$

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