Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.23$ | 3.23$ |
5 - 9 | 3.07$ | 3.07$ |
10 - 24 | 2.91$ | 2.91$ |
25 - 29 | 2.75$ | 2.75$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.23$ | 3.23$ |
5 - 9 | 3.07$ | 3.07$ |
10 - 24 | 2.91$ | 2.91$ |
25 - 29 | 2.75$ | 2.75$ |
STP62NS04Z. C(in): 1330pF. Cost): 420pF. Channel type: N. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: fully protected. Id(imp): 248A. ID (T=100°C): 37.5A. ID (T=25°C): 62A. Idss: 0.01mA. Idss (max): 62A. Marking on the case: P62NS04Z. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 12.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 13 ns. Technology: MESH OVERLAY™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 33V. Gate/source voltage Vgs: 10V. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 14:25.
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