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Semiconductors Transistors

SPA08N80C3

SPA08N80C3
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 2 4.07$ 4.07$
Quantity U.P
1 - 2 4.07$ 4.07$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2
Set of 1

SPA08N80C3. C(in): 1100pF. Cost): 46pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 24A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 20uA. Marking on the case: 08N60C3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.56 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 324
SPA11N80C3

SPA11N80C3

C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. ...
SPA11N80C3
C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
SPA11N80C3
C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
Set of 1
4.58$ VAT incl.
(4.58$ excl. VAT)
4.58$
Quantity in stock : 716
FQPF8N80C

FQPF8N80C

C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
FQPF8N80C
C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
FQPF8N80C
C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$

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FQPF10N60C

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DSC477M025S1ACH12K

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PPE-TIN2-E040G

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