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Semiconductors Transistors

SPD08N50C3

SPD08N50C3
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.11$ 3.11$
5 - 9 2.95$ 2.95$
10 - 24 2.80$ 2.80$
25 - 49 2.64$ 2.64$
50 - 95 2.58$ 2.58$
Quantity U.P
1 - 4 3.11$ 3.11$
5 - 9 2.95$ 2.95$
10 - 24 2.80$ 2.80$
25 - 49 2.64$ 2.64$
50 - 95 2.58$ 2.58$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 95
Set of 1

SPD08N50C3. C(in): 750pF. Cost): 350pF. Channel type: N. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 22.8A. ID (T=100°C): 4.6A. ID (T=25°C): 7.6A. Idss (max): 100uA. IDss (min): 0.5uA. Marking on the case: 08N50C3. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 560V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 66
STD10NM60N

STD10NM60N

C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Fu...
STD10NM60N
C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STD10NM60N
C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.33$ VAT incl.
(2.33$ excl. VAT)
2.33$

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Quantity in stock : 12
IPD050N03L-GATMA1

IPD050N03L-GATMA1

C(in): 2400pF. Cost): 920pF. Channel type: N. Id(imp): 350A. ID (T=100°C): 50A. ID (T=25°C): 50A. ...
IPD050N03L-GATMA1
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IPD050N03L-GATMA1
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Quantity in stock : 536
STD10P6F6

STD10P6F6

C(in): 340pF. Cost): 40pF. Channel type: P. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Fun...
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Quantity in stock : 119
STD7NM60N

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Cost): 24.6pF. Channel type: N. Trr Diode (Min.): 213 ns. Type of transistor: MOSFET. Function: 'Ext...
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Quantity in stock : 415832
1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
1N4007
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Quantity in stock : 152
IRF644

IRF644

C(in): 1300pF. Cost): 330pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min....
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Quantity in stock : 24
CHEM-WIK-AA

CHEM-WIK-AA

Note: yellow. Note: Tin-absorbing braid...
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Quantity in stock : 637
HUF75645S3S

HUF75645S3S

C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min....
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MOR2WS-560K

MOR2WS-560K

Resistance: 560k Ohms. Power: 2W. Resistor type: Metal layer. Temperature stability: 300ppm/°C. Ope...
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0.0879$ VAT incl.
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Quantity in stock : 173
IRF840

IRF840

C(in): 1300pF. Cost): 310pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. ...
IRF840
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