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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.5A, 30 v - MPSA13

NPN transistor, 0.5A, 30 v - MPSA13
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.96$ 0.96$
3 - 4 0.91$ 0.91$
5 - 9 0.86$ 0.86$
10 - 19 0.85$ 0.85$
20 - 32 0.82$ 0.82$
Quantity (Set of 5) U.P
1 - 2 0.96$ 0.96$
3 - 4 0.91$ 0.91$
5 - 9 0.86$ 0.86$
10 - 19 0.85$ 0.85$
20 - 32 0.82$ 0.82$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 159
Set of 5

NPN transistor, 0.5A, 30 v - MPSA13. NPN transistor, 0.5A, 30 v. Collector current: 0.5A. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. Original product from manufacturer Cdil. Quantity in stock updated on 05/06/2025, 23:25.

Equivalent products :

Quantity in stock : 185
MPSA14

MPSA14

NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (accord...
MPSA14
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V
MPSA14
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$

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2N3904

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TIP36C

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STK621-140E

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2SC5200

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FUSE-1-000A20F

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