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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 6A, TO-220FP, TO-220F, 450V - BUT18AF-PHI

NPN transistor, 6A, TO-220FP, TO-220F, 450V - BUT18AF-PHI
Quantity excl. VAT VAT incl.
1 - 4 4.08$ 4.08$
5 - 9 3.87$ 3.87$
10 - 24 3.67$ 3.67$
25 - 49 3.47$ 3.47$
50 - 99 3.38$ 3.38$
100 - 249 3.30$ 3.30$
250+ 3.18$ 3.18$
Quantity U.P
1 - 4 4.08$ 4.08$
5 - 9 3.87$ 3.87$
10 - 24 3.67$ 3.67$
25 - 49 3.47$ 3.47$
50 - 99 3.38$ 3.38$
100 - 249 3.30$ 3.30$
250+ 3.18$ 3.18$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 6A, TO-220FP, TO-220F, 450V - BUT18AF-PHI. NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Quantity per case: 1. Quantity in stock updated on 20/04/2025, 01:25.

Equivalent products :

Quantity in stock : 31
BUT18AF

BUT18AF

NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (acco...
BUT18AF
NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: high voltage, high speed
BUT18AF
NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: high voltage, high speed
Set of 1
1.08$ VAT incl.
(1.08$ excl. VAT)
1.08$

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Quantity in stock : 31
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