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NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V - 2N3055-PMC

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V - 2N3055-PMC
Quantity excl. VAT VAT incl.
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1 - 3 2.08$ 2.08$
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Quantity in stock : 3
Set of 1

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V - 2N3055-PMC. NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no. Quantity in stock updated on 13/04/2025, 19:25.

Equivalent products :

Quantity in stock : 47
2N3055-ONS

2N3055-ONS

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). H...
2N3055-ONS
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
2N3055-ONS
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
Set of 1
12.19$ VAT incl.
(12.19$ excl. VAT)
12.19$

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