2N2211A

Quantity	excl. VAT	VAT incl.
1 - 1	5.93$	5.93$
2 - 2	5.63$	5.63$
3 - 4	5.34$	5.34$
5 - 9	5.04$	5.04$
10 - 19	4.92$	4.92$
20 - 29	4.80$	4.80$
30 - 143	4.62$	4.62$

Quantity	U.P
1 - 1	5.93$	5.93$
2 - 2	5.63$	5.63$
3 - 4	5.34$	5.34$
5 - 9	5.04$	5.04$
10 - 19	4.92$	4.92$
20 - 29	4.80$	4.80$
30 - 143	4.62$	4.62$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 143

Set of 1

2N2211A. Quantity per case: 1. Semiconductor material: GE. FT: 8 MHz. Function: S-L. Max hFE gain: 140. Minimum hFE gain: 60. Collector current: 5A. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 100V. Collector/emitter voltage Vceo: 100V. Quantity in stock updated on 23/12/2024, 15:25.

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Delivery in 2-3 days, with postal tracking!