NPN bipolar transistors

NPN transistor, 25A, TO-247, TO-247, 100V, 100V. Collector current: 25A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1450. Max hFE gain: 50. Minimum hFE gain: 25. Ic(pulse): 50A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 125W. Max frequency: 3MHz. Spec info: complementary transistor (pair) TIP36C

NPN transistor, PCB soldering, TO-247, 25A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 25A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP35CG. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 6A, TO-220, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP42C. BE diode: no. CE diode: no

NPN transistor, 100V, 6A, TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 65W. Max frequency: 3MHz

NPN transistor, 1A, TO-220, TO-220, 400V. Collector current: 1A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Semiconductor material: silicon. FT: 10 MHz. Function: SILICON NPN SWITCHING TRANSISTOR. Max hFE gain: 150. Minimum hFE gain: 30. Ic(pulse): 2A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 1V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes

NPN transistor, 400V, 1A, TO-92. Collector-Emitter Voltage VCEO: 400V. Collector current: 1A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 1W

NPN transistor, 50V, 3A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 3A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.75W. Max frequency: 90MHz

NPN transistor, 18A, TO-3PMLH, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 18A. Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. FT: kHz. Function: High-Speed.. Max hFE gain: 15. Minimum hFE gain: 4. Ic(pulse): 35A. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: Ultrahigh-Hor. Deflection CRT Display. CE diode: yes

NPN transistor, 6A, TO-220FP, TO-220FI, 800V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Collector/emitter voltage Vceo: 800V. Cost): 110pF. Semiconductor material: silicon. Function: Vbe(sat)1.5V. Max hFE gain: 10. Minimum hFE gain: 5. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 3V. Number of terminals: 3. Quantity per case: 1. Spec info: with polarization resistor Rbe. BE diode: no. CE diode: no

NPN transistor, 6A, TO-220FP, TO-220FI, 800V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Collector/emitter voltage Vceo: 800V. Cost): 110pF. Semiconductor material: silicon. Function: Color TV Horizontal Deflection Output Applications. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 15A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Spec info: with polarization resistor Rbe. BE diode: no. CE diode: no

NPN transistor, 8A, TO-220FP, TO-220F, 800V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. Cost): 80pF. Semiconductor material: silicon. Function: Color TV Horizontal Deflection Output Applications. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 3V. Quantity per case: 1. Spec info: Vbe(sat) 1.5V. BE diode: no. CE diode: no

NPN transistor, 10A, 800V. Collector current: 10A. Collector/emitter voltage Vceo: 800V. Cost): 80pF. Semiconductor material: silicon. Pd (Power Dissipation, Max): 65W. Type of transistor: NPN. Vcbo: 1600V. Quantity per case: 1. Spec info: TT2206-YD TO-3PML. BE diode: no. CE diode: no

NPN transistor, EMT6. Housing (according to data sheet): EMT6. Marking on the case: H21. Assembly/installation: surface-mounted component (SMD). Technology: *SMD SO6*. Quantity per case: 2. Number of terminals: 6. Note: screen printing/SMD code H21

NPN transistor, EMT6. Housing (according to data sheet): EMT6. Marking on the case: H9C. Assembly/installation: surface-mounted component (SMD). Technology: *SMD SO6*. Quantity per case: 2. Number of terminals: 6. Note: screen printing/SMD code H9C

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. Function: INFI->PANAS. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Quantity per case: 1. BE diode: no. CE diode: yes

NPN transistor, 4A, TO-92, TO-92, 25V. Collector current: 4A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. Cost): 120pF. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 1200. Minimum hFE gain: 200. Ic(pulse): 20A. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -50...+200°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.03V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 2000. Function: unijunction transistor UJT, hi-beta, lo-sat. Spec info: complementary transistor (pair) ZTX788. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.25V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX550. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX551. BE diode: no. CE diode: no

NPN transistor, 300mA, TO-92, TO-92, 400V. Collector current: 300mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 400V. Cost): 5pF. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: PLANAR MEDIUM POWER TRANSISTOR. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 2A, TO-92, TO-92, 25V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. Cost): 50pF. Semiconductor material: silicon. FT: 240 MHz. Max hFE gain: 300. Minimum hFE gain: 15. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 35V. Saturation voltage VCE(sat): 0.23V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 2A, TO-92, TO-92, 100V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 100V. Cost): 30pF. Semiconductor material: silicon. FT: 175 MHz. Function: Very low saturation VBE(sat) 0.9V. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 1200 ns. Tf(min): 80 ns. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.13V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX753. BE diode: no. CE diode: no

NPN transistor, 2A, TO-92, TO-92, 45V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Semiconductor material: silicon. FT: 150 MHz. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Function: hFE 500, Very low-sat VBE(sat) 0.9V. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX790

NPN transistor, 5A, TO-92, TO-92, 60V. Collector current: 5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Semiconductor material: silicon. FT: 130 MHz. Function: Very low saturation VBE(sat)0.92V. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 20A. Pd (Power Dissipation, Max): 1.58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 1100 ns. Tf(min): 45 ns. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.2V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1