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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 6A, TO-220FP, TO-220FI, 800V - TT2140LS

NPN transistor, 6A, TO-220FP, TO-220FI, 800V - TT2140LS
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Quantity excl. VAT VAT incl.
1 - 1 6.79$ 6.79$
Quantity U.P
1 - 1 6.79$ 6.79$
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Quantity in stock : 1
Set of 1

NPN transistor, 6A, TO-220FP, TO-220FI, 800V - TT2140LS. NPN transistor, 6A, TO-220FP, TO-220FI, 800V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Collector/emitter voltage Vceo: 800V. Cost): 110pF. Semiconductor material: silicon. Function: Color TV Horizontal Deflection Output Applications. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 15A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Spec info: with polarization resistor Rbe. BE diode: no. CE diode: no. Quantity in stock updated on 15/04/2025, 09:25.

Technical documentation

Equivalent products :

Out of stock
2SD2499

2SD2499

NPN transistor, 6A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 6A. Housing (accordi...
2SD2499
NPN transistor, 6A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 6A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). BE resistor: 40 Ohms. Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V. BE diode: no. CE diode: yes
2SD2499
NPN transistor, 6A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 6A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). BE resistor: 40 Ohms. Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V. BE diode: no. CE diode: yes
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BU1508DX

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NPN transistor, 8A, TO-220FP, TO-220F, 700V. Collector current: 8A. Housing: TO-220FP. Housing (acco...
BU1508DX
NPN transistor, 8A, TO-220FP, TO-220F, 700V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 7. Minimum hFE gain: 4. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.6us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1V. Vebo: 13.5V
BU1508DX
NPN transistor, 8A, TO-220FP, TO-220F, 700V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 7. Minimum hFE gain: 4. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.6us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1V. Vebo: 13.5V
Set of 1
3.54$ VAT incl.
(3.54$ excl. VAT)
3.54$

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